SQD50N04-4M5L_GE3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	3.5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	130nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	5860pF @ 25V
FET Feature:	--
Power Dissipation (Max):	136W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-252AA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SQD50N04-4M5L_GE3 Application Field and Working Principle

The SQD50N04-4M5L_GE3 is a static field effect transistor (FET) for use in power switching applications. It is an industry standard wafer level package (WLP) FET and is suitable for applications such as low voltage power management, power switching, and power conversion. This article explains the application field, advantages, and working principle of the SQD50N04-4M5L_GE3 FET.

Application Field

The SQD50N04-4M5L_GE3 is suitable for many different power applications. Its low on-resistance makes it suitable for low voltage power management, such as those found in automotive, commercial and industrial systems. Additionally, its low driving power requirements makes it suitable for portable devices and battery powered applications. Also, the SQD50N04-4M5L_GE3 allows for efficient power switching and power conversion, making it suitable for a wide range of high power switching applications.

Advantages

The SQD50N04-4M5L_GE3 offers several advantages over other FET technologies. For example, it has a low on-resistance, even at high temperatures, which increases system efficiency and reduces power wasted in heat. Additionally, the SQD50N04-4M5L_GE3 has a small form factor, allowing for easy integration into tight spaces. Finally, its low power drive design minimizes system power consumption and reduces loading on the controlling components.

Working Principle

The working principle of the SQD50N04-4M5L_GE3 is simple and straightforward. The FET consists of a source, a drain, and a gate. The source and drain are connected to two electrodes, while the gate is connected to a control voltage. When the voltage applied to the gate is below a certain threshold, the FET is said to be “off”. On the other hand, when the voltage applied to the gate is above the threshold, the FET is said to be “on”. This allows for the efficient switching of power and the conversion of power from one form to another.

Conclusion

The SQD50N04-4M5L_GE3 is a versatile FET for a wide range of power applications. It has a low on-resistance, an efficient power switching and conversion capability, and a small form factor. Additionally, its low power drive design minimizes system power consumption and reduces loading on the controlling components. Furthermore, its working principle is simple and easy to understand. Therefore, the SQD50N04-4M5L_GE3 is an ideal FET for any power application.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description