SQD50N04-5M6_T4GE3

Series:	Automotive, AEC-Q101, TrenchFET®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	5.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	85nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	4000pF @ 25V
FET Feature:	--
Power Dissipation (Max):	71W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-252AA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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The SQD50N04-5M6_T4GE3 is a high-performance, low-voltage MOSFET designed to operate with supply voltages as low as 2V and currents as high as 5A. This device is equipped with a low-voltage and high-current capability, making it a preferred choice in numerous applications. Its principal features include high drain-source breakdown voltage and low on-state resistance. The SQD50N04-5M6_T4GE3 is an enhancement-mode N-channel MOSFET, making it suitable for use in switch-mode power supplies, voltage regulators, and current-flow control.The most important feature of the SQD50N04-5M6_T4GE3 is its low-voltage and high-current capability. This allows the device to be used in applications which require both low-voltage and high-current operation. In addition to being used in switch-mode power supplies, voltage regulators, and current-flow control, the SQD50N04-5M6_T4GE3 can also be used in digital circuit and load switching applications, as well as in pulse-width-modulated (PWM) and various general-purpose driving applications.The SQD50N04-5M6_T4GE3 works by allowing a current to flow through the source-drain pass gate when the gate (control terminal) is at a higher potential than the source. This allows electrons to move from the source to the drain. The voltage applied to the gate terminal determines the degree to which current will be allowed to flow from the source to the drain, allowing for fine control of the current.This makes the SQD50N04-5M6_T4GE3 useful for its high-current, low-voltage capability, allowing the user to control the current flow precisely. By controlling the amount of current being allowed to flow, the amount of heat generated by the device can be reduced, allowing for efficient operation. Furthermore, the ability to operate at low-voltage and high-current also makes the SQD50N04-5M6_T4GE3 ideal for digital circuit and load switching applications.The SQD50N04-5M6_T4GE3 also has a high drain-source breakdown voltage, meaning that it can safely handle up to 30V in order to carry higher currents. This means the SQD50N04-5M6_T4GE3 can be used in high-current applications without loss in performance. Furthermore, its low on-state resistance means it can carry plenty of current with very little resistance, allowing it to operate efficiently.Overall, the SQD50N04-5M6_T4GE3 is an excellent choice for numerous applications requiring low-voltage and high-current operation. It features a low-voltage and high-current capability and a high drain-source breakdown voltage, making it an ideal choice for digital circuit and load switching applications. Furthermore, its low on-state resistance means it can carry more current with less resistance, allowing for more efficient operation.

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