SQD50P08-25L_GE3 Allicdata Electronics
Allicdata Part #:

SQD50P08-25L_GE3TR-ND

Manufacturer Part#:

SQD50P08-25L_GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CHAN 80V TO252
More Detail: P-Channel 80V 50A (Tc) 136W (Tc) Surface Mount TO-...
DataSheet: SQD50P08-25L_GE3 datasheetSQD50P08-25L_GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101, TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 25 mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5350pF @ 25V
FET Feature: --
Power Dissipation (Max): 136W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252AA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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The SQD50P08-25L_GE3 is a Field Effect Transistor (FET) and part of a portfolio of power FETs that comes in a range of channel architectures and configuration styles and can be adapted to a variety of application scenarios. It is a power MOSFET with an N-channel, P-channel and ESD protection circuit that are integrated in a single package.

The working principle of the SQD50P08-25L_GE3 is based on the principle of operation of all FETs. It is an electro-magnetic device with a controllable gate region, which can be used to control the carrier density in the device and therefore allow current to flow through the channel. The gate region is the most important area in the device. It is where the voltage supplied by the user is applied in order to turn the device on and off. In the SQD50P08-25L_GE3, the voltage applied to the gate region determines the amount of current that can be allowed to flow through the channel.

The SQD50P08-25L_GE3 can be used in a range of applications that require a high level of current control. It is specifically designed for use in on/off switching applications such as motor control, power control, UPS systems, AC/DC converters, and other consumer or automotive applications. This device can be used to switch heavier loads of up to 50A and with a maximum drain-source voltage of 800V for increased efficiency. It also has an on-resistance of 0.8 Ohms and is optimised for fast switching speeds.

In applications such as motor control, the SQD50P08-25L_GE3 acts as an electronic switch that helps regulate the speed and direction of a motor. It uses the voltage applied to the gate to control the current running through the channel, which in turn controls the speed and direction in which the motor is running. The device is also used in power control systems, where it is used to switch larger loads on and off. The device can also be used to control the current in applications such as UPS systems, AC/DC converters, and other consumer or automotive applications.

The SQD50P08-25L_GE3 is also designed with a number of integrated protective features. For instance, it is designed with a reverse biased body diode that can be used to protect against accidental reverse current flow and with an ESD protection circuit for added protection from static electricity. The device also has a built in gate-source voltage protection feature that prevents gate-source overvoltage, which can be caused during load switch or inrush current events.

The SQD50P08-25L_GE3 is a versatile power FET that can be used in a wide range of applications. It is designed with an integrated P-channel, N-channel and ESD protection circuit, which make it an ideal choice for applications that require high current switching or control. The device can be used in applications such as motor control, power control and UPS systems, as well as AC/DC converters and other consumer or automotive applications.

The specific data is subject to PDF, and the above content is for reference

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