SQD50P04-13L_GE3

Series:	TrenchFET®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	13 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	90nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	3590pF @ 20V
FET Feature:	--
Power Dissipation (Max):	3W (Ta), 136W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-252, (D-Pak)
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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HTML is the standard markup language for creating webpages and web applications. With Cascading Style Sheets (CSS) and JavaScript, it forms a triad of cornerstone technologies for the World Wide Web.The SQD50P04-13L_GE3 is a single-kan Logic FET (Field Effect Transistor) which is suitable for digital switching, logic level interfaces, and data and video bus switching applications. It is available in either a SOT-23 or SOT-323 package. The SQD50P04-13L_GE3 is part of a series of single-kan Logic FETs manufactured by Fairchild Semiconductor.The SQD50P04-13L_GE3 is an N-channel enhancement-mode power field effect transistor designed for use in analog and digital applications. It has an on-state drain-source resistance of just 6 Ohms and an operating temperature range of -55ºC to +125ºC. The device is capable of handling up to 10A of drain current and 30V of drain-source voltage. It exhibits low on-state resistance, fast switching speeds, and low gate-to source thresholds.The SQD50P04-13L_GE3 features high gate sensitivity, high gate-source transconductance, low gate-to-source leakage, and an ultra-low threshold voltage. It is designed for use in digital applications such as level shifting, direct logic interfaces, and data and video bus switching. The device can also be used in analog switching applications, including power MOSFET gate driving and signal switching.The SQD50P04-13L_GE3 has an N-channel semiconductor construction and is built using advanced CMOS technology. It is designed with a cascode structure for optimal performance and reliability. The device uses a P-channel enhancement type device to turn on the transistor, and a N-channel device to turn off the transistor. This allows the device to switch quickly between on and off states.The working principle of the SQD50P04-13L_GE3 is relatively simple. When the gate voltage is higher than the source voltage, the device is turned on and current starts to flow between source and drain. When the gate voltage is lower than the source voltage, the device is turned off and no current flows. The device can be used to control the flow of current, and can be used as a switch or as an amplifier.In summary, the SQD50P04-13L_GE3 is a single-kan Logic FET manufactured by Fairchild Semiconductor. It is designed for use in digital and analog switching applications and features a low on-state resistance, fast switching speeds, and low gate-to source thresholds. It has an N-channel enhancement-mode construction and works by turning on when the gate voltage is higher than the source voltage and turning off when the gate voltage is lower. This device is ideal for level shifting, direct logic interfaces, data and video bus switching, and power MOSFET gate driving.

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