SQD50P06-15L_GE3 Allicdata Electronics
Allicdata Part #:

SQD50P06-15L_GE3TR-ND

Manufacturer Part#:

SQD50P06-15L_GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 60V 50A TO252
More Detail: P-Channel 60V 50A (Tc) 136W (Tc) Surface Mount TO-...
DataSheet: SQD50P06-15L_GE3 datasheetSQD50P06-15L_GE3 Datasheet/PDF
Quantity: 4000
Stock 4000Can Ship Immediately
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5910pF @ 25V
FET Feature: --
Power Dissipation (Max): 136W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252, (D-Pak)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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SQD50P06-15L_GE3 is a common, reliable and widely used component in which the FET (Field-Effect Transistor) of the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) type is used. This component has two main applications, namely in the field of switching and power control. In the field of switching, this component is used to turn on or off the electrical overload or inductive load such as in a motor control drive.

The SQD50P06-15L_GE3 offers a unique feature in that it can be operated as an insulated-gate bipolar transistor (IGBT). This allows it to process current more than twice the rated current of the component and also significantly reduce emission and radiated noise due to the improved circuit design. Moreover, it is designed to operate at very high temperature without deteriorating performance, making it suitable for use in automotive and industrial designs.

The SQD50P06-15L_GE3 is a high performance device as it is able to switch up to 50A RMS current. It has low on-state resistance of 5mΩ which allow it to provide high speed switching with low output resistance and great transient response. This component also has low threshold voltage of 2.5V which ensures maximum silence when in operation.

The SQD50P06-15L_GE3 is an enhancement-mode MOSFET and its working principle is based on the principle of electrostatics. In this type of device, the electric field generated between the gate electrode and the body of the device regulates the flow of a conducting channel between the source and drain. The magnitude of the effect of the electric field is determined by the bias voltage applied to the gate voltage. When the gate-source voltage is higher than the threshold voltage, a conducting channel is formed and the device is said to be in its “on” state. On the other hand, when the gate source voltage is lower than the threshold voltage, the device is in its "off" state and the current does not flow through it. The threshold voltage is typically determined by the doping profile.

The SQD50P06-15L_GE3 provides wide range of features to ensure high-efficiency drive and excellent reliability. It is capable of providing a very low resistance channel between the source and drain, hence making it suitable for applications that demand low voltage and high current operation. Due to its robust construction, it provides excellent thermal stability and reliability. It is very popular in the field of switching due to its superior performance and high speed switching characteristics. Furthermore, this component is also suitable for applications where high temperature and high frequency operation is expected.

The SQD50P06-15L_GE3 is an ideal component to use in any application that requires high power switching and control. It offers a wide range of features that can fulfil different requirements of different applications. Its high-switching capabilities, low thermal dissipation value, high current rating and low threshold voltage make it an ideal choice for various applications such as automotive, robotics and industrial automation.

The specific data is subject to PDF, and the above content is for reference

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