SQD50P03-07_GE3

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SQD50P03-07_GE3 is a member of the SQD50Pxx-xx family of General-purpose N- and P-Channel MOSFETs manufactured by STMicroelectronics(ST). It is a single N-channel enhancement mode MOSFET specifically designed for low power and high-temperature applications.

The device is an ideal choice for applications that require low-gain, low-noise, low-voltage transmission, as it has a low on-resistance and does not suffer from secondary breakdown. It is also very power efficient, consuming very little power compared to other similar devices.

The SQD50P03-07_GE3 is ideal for a variety of applications, including power converters, switch mode power supplies (SMPSs), frequency response systems, high-voltage power supplies, and class-D audio amplifiers. It features a high-speed, low-voltage transistor threshold voltage (Vt) of 2.5V, with very low gate-source capacitance and on-resistance, providing excellent efficiency and linearity.

In addition to its electrical parameters, the SQD50P03-07_GE3 also offers a wide range of operating temperature ranges from -40°C to +125°C. This device also provides an adjustable temperature range over its operating temperature range.

The working principle of the SQD50P03-07_GE3 is simple. When a positive electrical potential is applied to its gate, an electric field is produced which attracts electrons from the drain terminal and causes them to become “depleted”. This leaves a void of free electrons to the drain terminal, which effectively restricts the current flow between the source and the drain terminal. When the gate voltage passes below the Vt, the electric field is disrupted and the current flow is restored.

The SQD50P03-07_GE3 is an excellent choice for low-power, high-temperature applications, as it offers an adjustable temperature range and high performance in a small package. It is designed for simple, reliable applications with a high switching speed and low voltage, providing a suitable solution for many industrial applications.

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