Allicdata Part #: | SQD50N04-5M6_GE3-ND |
Manufacturer Part#: |
SQD50N04-5M6_GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 40V 50A TO-252 |
More Detail: | N-Channel 40V 50A (Tc) 71W (Tc) Surface Mount TO-2... |
DataSheet: | SQD50N04-5M6_GE3 Datasheet/PDF |
Quantity: | 1000 |
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 5.6 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 85nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4000pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 71W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Transistors are a type of electrical component used to amplify or switch electric signals. MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are one of the most commonly used transistor types, and the SQD50N04-5M6_GE3 is one particular device used as a Logic Level Gate Drive for various applications.
The SQD50N04-5M6_GE3 is known as a 4×4.5mm surface mounted single-channel enhancement mode MOSFET. It is a single transistor device with the drain, source, and gate pins clearly indicated. Its operating temperature range is -55 to +175 Degrees Celsius, with a forward voltage range of 4-38 Volts. It has an ultra-low resistance RDS(ON) of just 50 milliohms, allowing it to operate efficiently and handle significant currents.
The application field of the SQD50N04-5M6_GE3 is the actuation of logic level circuits. It is used to control the flow of electric signals and currents in varying strength, or to eliminate them. Using a Logic Level Gate Drive, the SQD50N04-5M6_GE3 can easily be actuated to fit the specific application. The device has a high pulse current handling capability, as well as low output capacitance, making it suitable for high-speed switching applications. It is also capable of driving LEDs, CFLs, and other peripherals with a steady voltage to ensure smooth operation.
The working principle of the SQD50N04-5M6_GE3 is based on the principle of a MOSFET, with the addition of the Logic Level Gate Drive. The Logic Level Gate Drive is an integrated circuit within the chip which provides and receives the necessary voltages for actuation. It takes in the input voltage supplied and then applies a potential change to the gate which controls the flow of charge carriers. The Logic Level Gate Drive is then able to provide current without consuming too much power, making it a very efficient switching device.
The SQD50N04-5M6_GE3 is a powerful and versatile device that is suitable for many applications. It is capable of controlling both current and voltage with consistent results and requires very little maintenance. It is an ideal switch for controlling current flow in logic circuits and for driving various peripherals.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SQD50N04-09H-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 40V 50A TO252... |
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