SQD50N04-5M6_GE3 Allicdata Electronics
Allicdata Part #:

SQD50N04-5M6_GE3-ND

Manufacturer Part#:

SQD50N04-5M6_GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 40V 50A TO-252
More Detail: N-Channel 40V 50A (Tc) 71W (Tc) Surface Mount TO-2...
DataSheet: SQD50N04-5M6_GE3 datasheetSQD50N04-5M6_GE3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101, TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 85nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 25V
FET Feature: --
Power Dissipation (Max): 71W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Description

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Transistors are a type of electrical component used to amplify or switch electric signals. MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are one of the most commonly used transistor types, and the SQD50N04-5M6_GE3 is one particular device used as a Logic Level Gate Drive for various applications.

The SQD50N04-5M6_GE3 is known as a 4×4.5mm surface mounted single-channel enhancement mode MOSFET. It is a single transistor device with the drain, source, and gate pins clearly indicated. Its operating temperature range is -55 to +175 Degrees Celsius, with a forward voltage range of 4-38 Volts. It has an ultra-low resistance RDS(ON) of just 50 milliohms, allowing it to operate efficiently and handle significant currents.

The application field of the SQD50N04-5M6_GE3 is the actuation of logic level circuits. It is used to control the flow of electric signals and currents in varying strength, or to eliminate them. Using a Logic Level Gate Drive, the SQD50N04-5M6_GE3 can easily be actuated to fit the specific application. The device has a high pulse current handling capability, as well as low output capacitance, making it suitable for high-speed switching applications. It is also capable of driving LEDs, CFLs, and other peripherals with a steady voltage to ensure smooth operation.

The working principle of the SQD50N04-5M6_GE3 is based on the principle of a MOSFET, with the addition of the Logic Level Gate Drive. The Logic Level Gate Drive is an integrated circuit within the chip which provides and receives the necessary voltages for actuation. It takes in the input voltage supplied and then applies a potential change to the gate which controls the flow of charge carriers. The Logic Level Gate Drive is then able to provide current without consuming too much power, making it a very efficient switching device.

The SQD50N04-5M6_GE3 is a powerful and versatile device that is suitable for many applications. It is capable of controlling both current and voltage with consistent results and requires very little maintenance. It is an ideal switch for controlling current flow in logic circuits and for driving various peripherals.

The specific data is subject to PDF, and the above content is for reference

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