| Allicdata Part #: | SQD50N06-09L_GE3TR-ND |
| Manufacturer Part#: |
SQD50N06-09L_GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 60V 50A |
| More Detail: | N-Channel 60V 50A (Tc) 136W (Tc) Surface Mount TO-... |
| DataSheet: |  SQD50N06-09L_GE3 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Series: | TrenchFET® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 60V |
| Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 9 mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 3065pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 136W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | TO-252, (D-Pak) |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Description
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The SQD50N06-09L_GE3 is a high-efficiency transistor component specifically designed to minimize negative effects on the overall power efficiency of electrical circuits. This transistor component is a type of Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) and is classified as a single type. This device is mainly used in a variety of applications such as power switching, driving small components, and controlling logic gates, among other applications. The component also features an excellent thermal and electrical performance which makes it a great choice when it comes to long-term system stability. In this article, we will discuss the application field of the SQD50N06-09L_GE3, as well as its working principle.
Application Field
The SQD50N06-09L_GE3 is mainly used for power switching applications, especially in applications where thermal and electrical performance is of the utmost importance. As a single type of MOSFET, the component can handle high frequencies and current with relative ease, making it an excellent choice for switching power between different electrical devices. The device can also be used for voltage and logic level control, driving small motors, and providing isolation of different circuits or components. Due to its excellent thermal and electrical performance, it is also used in automotive and industrial applications where circuit stability is essential.
Working Principle
The working principle of the SQD50N06-09L_GE3 transistor component is based on the principle of the MOSFET. MOSFETs operate by modulating the voltage or current flow through the component using an electric field. This is achieved by utilizing a metal oxide layer that serves as a semiconductor. This layer is placed between two terminals of the component, and when an appropriate voltage is applied to one of them, it will cause the electrons in the oxide layer to move, creating an electric field that modulates the current flow. In this way, the component can be used to control current flow, voltage, and even logic levels.
The SQD50N06-09L_GE3 is a highly efficient transistor component that is often used in power switching and logic applications. The device features excellent thermal and electrical performance, and its single type classification makes it an ideal choice when it comes to circuit stability. The component operates based on the MOSFET principle and utilizes an electric field to modulate current flow, voltage, and logic levels. This makes it an excellent choice for a variety of applications, such as switching between components with different voltages, and driving small motors or controlling logic levels.
The specific data is subject to PDF, and the above content is for reference
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