Allicdata Part #: | SQJ912BEP-T1_GE3TR-ND |
Manufacturer Part#: |
SQJ912BEP-T1_GE3 |
Price: | $ 0.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH DUAL 40V PPSO-8L |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 30A (Tc) 48W (... |
DataSheet: | SQJ912BEP-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.34081 |
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 25V |
Power - Max: | 48W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PowerPAK® SO-8 Dual |
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The SQJ912BEP-T1_GE3 is a monolithic high-performance low-voltage-powered transceiver module designed primarily for industrial and commercial applications. It consists of two separate components, both of which are housed in the same package. The first component is a low-voltage-powered FET array, which consists of eight individually controllable field effect transistors (FETs) designed to provide highly efficient control and power conversion capabilities to a wide variety of applications. The second component is a low-voltage-powered MOSFET array, which consists of four individually controllable FETs that are configured to enable the device to achieve higher frequencies and greater power scalability than the typical single FET.
The SQJ912BEP-T1_GE3 is well-suited for applications requiring low-power, high-reliability, high-performance transceiver modules. This transceiver module is capable of processing up to twenty-four volts, which makes it ideal for industrial, automation, robotics, and other commercial applications. Additionally, the device is designed to offer high-speed data transmission rates and provide greater accuracy in data processing due to its low-power operation and low-voltage-powered configuration.
The SQJ912BEP-T1_GE3 consists of two distinct parts: the FET array and the MOSFET array. The FET array is a low-voltage-powered monolithic array of eight high-efficiency FETs. Each of these FETs is individually controllable and is configured to provide switchable high-power control, providing the necessary flexibility to meet a wide range of applications. The FET array is designed to be compatible with a variety of voltage levels and is capable of switching between these levels with minimal distortion.
The MOSFET array is a low-voltage-powered monolithic array of four individually controllable FETs. This configuration enables the device to achieve higher frequencies and higher power scalability than the typical single FET. The FETs in the MOSFET array are designed to be configured in parallel to enable high-performance data transmission rates. The MOSFET array is analogous to the FET array but is capable of processing higher frequencies and greater power scalability.
The SQJ912BEP-T1_GE3 transceiver module is well-suited for a variety of industrial and commercial applications. Most notably, it can be used in applications requiring powerful data processing, robust control, and high-speed data transmission. The device is compatible with a variety of voltage levels and is capable of providing high-efficiency control in a low-voltage-powered configuration. The device is also capable of providing high-performance data transmission rates with minimal distortion. Additionally, the device offers greater accuracy in data processing due to its low-power operation and low-voltage-powered configuration.
The specific data is subject to PDF, and the above content is for reference
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