Allicdata Part #: | SQJ941EP-T1-GE3-ND |
Manufacturer Part#: |
SQJ941EP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 30V 8A PPAK SO-8 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 30V 8A 55W Surface... |
DataSheet: | SQJ941EP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 8A |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 55nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 10V |
Power - Max: | 55W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® SO-8 Dual |
Supplier Device Package: | PowerPAK® SO-8 Dual |
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The SQJ941EP-T1-GE3 is an array transistor that is part of the family of field effect transistors (FETs) and metal oxide semiconductor field effect transistors (MOSFETs). It is an integrated transistor array with four single-channel junction gate field-effect transistors. The SQJ941EP-T1-GE3 is designed for use in power field applications, providing extremely high reliability and excellent results. This type of array transistor is perfect for use in demanding applications where power supply requirements and power performance need to be managed. The transistor array offers a solution that is cost-effective and efficient.
The SQJ941EP-T1-GE3 operates using junction gate field-effect technology, a common type of FET. The most important characteristic of FETs is their ability to amplify or switch current using an input voltage. This makes them ideal for use in amplifying or switching signals, voltage regulation, and power management. The transistor array maintains high operating speeds, low power consumption, and high efficiency at frequencies of up to 1GHz. This enables the device to handle rapidly varying current and voltage in power-management applications.
The individual transistors within the array are connected in series and will operate as a single unit. The transistors within the device can be used in either parallel or series combinations depending on the passing of current, allowing for a more efficient power transfer. The transistors are also configured in both N-channel and P-channel devices, allowing for more diverse applications. The transistor array also contains two types of built-in circuitry that helps protect the device from various external threats. This includes a reverse-parasitic diode that provides protection against ESD and an electrostatic protection diode that prevents voltage spikes and current leakage.
The SQJ941EP-T1-GE3 is an excellent choice for applications where power must be managed and managed efficiently. It provides extremely high reliability and excellent results along with low power consumption and high efficiency. The array transistor offers a cost-effective and efficient solution for managing power in demanding applications. With its integrated circuitry and four single-channel transistors, the SQJ941EP-T1-GE3 is an ideal solution for a variety of power-related applications.
The specific data is subject to PDF, and the above content is for reference
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