Allicdata Part #: | SQJ940EP-T1_GE3TR-ND |
Manufacturer Part#: |
SQJ940EP-T1_GE3 |
Price: | $ 0.39 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 40V 15A PPAK SO-8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 15A (Ta), 18A ... |
DataSheet: | SQJ940EP-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.35166 |
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta), 18A (Tc) |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 896pF @ 20V |
Power - Max: | 48W, 43W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® SO-8 Dual |
Supplier Device Package: | PowerPAK® SO-8 Dual Asymmetric |
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Introduction: The SQJ940EP-T1_GE3 is a highly integrated, high-performance, fast switching power MOSFET array ideal for use in applications such as computer memory, power supply and motor control. It comes in fewer packages compared to most similar power MOSFET array devices, making it ideal for space-limited applications. The device can also reduce switching losses and increase switching speed. This article will discuss the application field and working principle of the SQJ940EP-T1_GE3.
Application Field: The SQJ940EP-T1_GE3 is an ideal device for applications in motor control, computer memory and power supply. In motor control, the device can reduce switching losses and increase switching speed. It can also be used in computer memory applications as it is suitable for short switching times due to its fast switching speeds and high-performance operation. In power supply applications, it is ideal for high-power applications that demand high current and low on-resistance.
Working Principle: The device uses a array of MOSFET (metal oxide semiconductor field-effect transistor) to switch power on and off depending on the current flowing through its gate. This is done through an array of insulated gates, a source line, and a drain line. When a voltage is applied to the gate, it will attract electrons from the source line and allow a current to flow through the drain line. The current is then amplified by the number of transistors in the array. This allows for precise control and high efficiency in power conversion.
Advantages: The SQJ940EP-T1_GE3 is ideal for applications where precise switching is needed and/or high power efficiency is desired. The device also features reduced switching losses, fast switching time, high-current ratings, and minimal on-resistance. This makes the device particularly suited for applications with limited space or where tight control is required.
Conclusion: The SQJ940EP-T1_GE3 is a powerful MOSFET array that provides precise control and high power efficiency. It is ideal for applications such as computer memory, power supply and motor control. The device features reduced switching losses, fast switching time, and high-current ratings, making it a great choice for power-hungry applications.
The specific data is subject to PDF, and the above content is for reference
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