Allicdata Part #: | SQJ980AEP-T1_GE3TR-ND |
Manufacturer Part#: |
SQJ980AEP-T1_GE3 |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2 N-CH 75V POWERPAK SO8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 75V 17A (Tc) 34W (... |
DataSheet: | SQJ980AEP-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.31646 |
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 75V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 3.8A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 790pF @ 35V |
Power - Max: | 34W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® SO-8 Dual |
Supplier Device Package: | PowerPAK® SO-8 Dual |
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The SQJ980AEP-T1_GE3 is an array of type 3-terminal Bipolar Junction Transistors (BJTs) designed specifically for high frequency, low power analog and digital applications. It is a very efficient, low-power device and can be used in a wide range of applications. It is also used in the application fields of automotive, industrial, medical, and consumer electronics.
The GE3 array consists of two complementary NPN transistors (Q1 and Q2) connected in a single package. This allows for higher switching performance and higher noise immunity. Each transistor can be independently addressed and can be used to provide the drive signals for analog and digital circuits.
The SQJ980AEP-T1_GE3 is designed to provide a low dynamic resistance. This helps to reduce power dissipation and improve efficiency. It also has a low-noise characteristic that helps minimize interference in sensitive applications. Additionally, the GE3 array offers robust protection from overvoltage and overcurrent.
The SQJ980AEP-T1_GE3 is designed for use in low power, high frequency applications. The device provides excellent switching speed with very low power dissipation. This makes it ideal for use in switching applications such as power supply and motor control. It can also be used in high frequency switching such as clock buffering and signal generation. The device also features thermal protection, which prevents the device from damages due to overheating.
The working principle of the SQJ980AEP-T1_GE3 is based on the principle of the BJT. This device consists of three terminals which are Base, Collector and Emitter. When an input voltage is applied at Base, then a small current flows through the Base-Emitter junction and is amplified by the Collector-Emitter current. The device acts like a switch when the voltage at the Base is turned OFF, thus interrupting the current flow. This allows the device to be used in switching and signal control applications.
The SQJ980AEP-T1_GE3 has been designed to deliver highly reliable performance in a compact and easy-to-use package. The device provides excellent speed and low power consumption, making it ideal for a wide range of light-load, high frequency applications. It is also very well-suited for designs that require low thermal resistance, and is quite popular in today’s automated, digital systems. As such, it is a versatile and reliable device that can help in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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