Allicdata Part #: | SQJ942EP-T1_GE3-ND |
Manufacturer Part#: |
SQJ942EP-T1_GE3 |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2 N-CH 40V POWERPAK SO8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 40V 15A (Tc), 45A ... |
DataSheet: | SQJ942EP-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.29212 |
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc), 45A (Tc) |
Rds On (Max) @ Id, Vgs: | 22 mOhm @ 7.8A, 10V, 11 mOhm @ 10.1A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 19.7nC @ 10V, 33.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 809pF @ 20V, 1451pF @ 20V |
Power - Max: | 17W, 48W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SQJ942EP-T1_GE3 is a highly efficient, high power array consisting of four P-Channel enhance mode field effect transistors (PFETs) in a single package. This device is an ideal choice for switching high power loads in various applications in the automotive, industrial, and consumer electronics markets.
The primary use of the SQJ942EP-T1_GE3 is in applications involving high-power switching. These transistors are capable of handling in excess of 40 Volts at 5 Amps. The device also boasts a fast switching speed of 1.4 nanoseconds, and a bias voltage of 1.2V on average. The SQJ942EP-T1_GE3 also has an operating temperature range of -65°C to 150°C.
The SQJ942EP-T1_GE3 is a great choice for a wide variety of automotive and industrial applications. For example, it could be used to switch loads such as motors, pumps, lights, and HVAC systems. It is also an ideal choice for power supply switching applications, such as in cellphone chargers or computer supplies. In addition, this device can be employed in high current load applications, such as in audio amplifiers or solar powered systems.
The working principle of the SQJ942EP-T1_GE3 is fairly straightforward. The device is a four-transistor array consisting of four P-channel enhancement mode field effect transistors (PFETs). The P and N channel FETs are connected in series and are used to control the current flow in the circuit. When an appropriate bias voltage is applied to the gate of the device, the current flow is controlled accordingly.
When the gate of the SQJ942EP-T1_GE3 is driven by an appropriate voltage, the FETs will form a depletion region and turn the device on. When the gate voltage is zero, the currents will be OFF. This allows for precise control of the current levels. To reverse the current flow through the device, the voltage applied at the gate must be reversed.
The SQJ942EP-T1_GE3 is a highly efficient and reliable device for high power switching applications. It offers an ideal balance of power handling, switching speed, and temperature tolerance, making it an excellent choice for a wide variety of automotive, industrial, and consumer electronics applications. Its simple yet effective working principle makes this device an easy choice for anyone who needs a reliable, fast switching solution.
The specific data is subject to PDF, and the above content is for reference
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