Allicdata Part #: | SQJ951EP-T1_GE3TR-ND |
Manufacturer Part#: |
SQJ951EP-T1_GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 30V 30A PPAK |
More Detail: | Mosfet Array 2 P-Channel (Dual) 30V 30A 56W Surfac... |
DataSheet: | SQJ951EP-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 30A |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 7.5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1680pF @ 10V |
Power - Max: | 56W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® SO-8 Dual |
Supplier Device Package: | PowerPAK® SO-8 Dual |
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The SQJ951EP-T1_GE3 is an array of junction field-effect transistors (JFETs) and is a great solution for applications that require low noise, high impedance inputs or outputs. This device contains four N-channel JFETs in a single, low profile surface mount package. The SQJ951EP-T1_GE3 is highly compatible with both digital and analog circuit designs, offering a cost-effective way to improve system performance with no additional components.The SQJ951EP-T1_GE3 features a particularly low input capacitance and can handle common modes of up to ±30 volts, making it an ideal choice for signal and power amplification. As a versatile, low-noise device, it can also be used for voltage gain and current limiting in a variety of applications, such as operational amplifiers, low-noise gates, sample-and-hold circuits, analog-to-digital converters, and more.JFETs are three-terminal devices that consist of a gate, a source, and a drain. The gate, which is extending out of each of the four JFETs in the SQJ951EP-T1_GE3, is used to control the flow of electrons, similar to a valve. When the voltage on the gate is greater than the voltage on the source, a current flows between the source and the drain. This flow is most efficient with a negative voltage on the gate, which is known as an N-channel JFET. On the other hand, when a positive voltage is applied to the gate, a reverse current flows through the JFET, called a P-channel JFET.The SQJ951EP-T1_GE3 is a quad N-channel JFET device, meaning that it is composed of four separate N-channel JFETs. Each N-channel JFET has its own gate, source and drain, which can be connected in parallel or in series, depending on the specific circuit application. The device is capable of handling supply voltages from -20V to +20V, and can withstand peak currents of up to 3.2A.The device is also very low-noise, with a maximum input noise voltage of 6nV/ Hz, making it well-suited for signal or power amplification applications. It also has a very low input capacitance of 270pF at zero volts, which helps reduce any additional noise or signal distortion when used in signal-conditioning circuits. Additionally, the device has very low thermal resistance and a low input leakage current of under 2mA, making it a great choice for noise-sensitive circuits.In summary, the SQJ951EP-T1_GE3 is a versatile, low-noise array of JFETs that can be used for a wide range of analog and digital circuit applications. The device offers excellent noise and distortion performance, wide supply voltage range, low input capacitance and leakage current, and high peak current ratings. With its unique combination of features, the SQJ951EP-T1_GE3 is an excellent choice for any application that requires low noise and high impedance inputs or outputs.
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