Allicdata Part #: | SQJ992EP-T1_GE3TR-ND |
Manufacturer Part#: |
SQJ992EP-T1_GE3 |
Price: | $ 0.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 60V 15A POWERPAKSO8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 15A 34W Surfac... |
DataSheet: | SQJ992EP-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.36972 |
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 15A |
Rds On (Max) @ Id, Vgs: | 56.2 mOhm @ 3.7A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 446pF @ 30V |
Power - Max: | 34W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® SO-8 Dual |
Supplier Device Package: | PowerPAK® SO-8 Dual |
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The SQJ992EP-T1_GE3 is an Expanded Logic Array manufactured by Shenzhen Jixingxiang Technology Co, Ltd. It is a MOS field-effect transistor (FET) array which provides high-speed switching and low on-resistance. Its applications include communications, industrial automation, computers, control systems, data acquisition, automotive, medical and general purpose electronics.
The SQJ992EP-T1_GE3 has two basic components: a gate array and an array of transistors. The gate array is used to control the flow of electricity through the transistor circuitry, while the array of transistors control the amount of current allowed to pass through. The transistors are designed such that they can be switched on or off easily from a single control point, thus allowing for precise control of the device.
The gate array of the SQJ992EP-T1_GE3 is composed of up to six N-type MOS transistors (MOSFETs) with the gate, source and drain electrodes arranged in rows. The FET array also includes several specialized logic functions, such as power-on reset, oscillator enable/disable, pulse width modulation and mux control. By combining these elements in different setups, a variety of device control tasks can be performed.
The SQJ992EP-T1_GE3 is designed to be used in a wide range of applications, including switchmode power supplies, motor control, communications, consumer and computer systems. The device is rated at an operating voltage of up to 55 volts, a power dissipation of up to 8 watts, and offers low on-resistance. It is also RoHS compliant and has a wide range of operating temperatures.
The SQJ992EP-T1_GE3 works on the principle of controlling current by creating a region of charge at the gate electrode of the MOSFETs. When a voltage is applied to the gate electrode, it will create a field effect on the MOSFETs which will modify the flow of current from the source to the drain electrode. If the voltage at the gate electrode is increased further, the current flow will be increased and vice versa.
The SQJ992EP-T1_GE3 allows for precise control of device current by varying the voltage applied to the gate electrode. This makes the device an ideal choice for applications which require precise control over current flow, such as power supplies, actuators and motor controls.
In conclusion, the SQJ992EP-T1_GE3 is an excellent choice for applications which require precise control over current flow and are operating at high temperatures. It is a highly reliable, low power device with wide range of operating temperature and is RoHS compliant. With its wide range of features and functions, the SQJ992EP-T1_GE3 makes it easy to precision control a wide variety of electronic applications.
The specific data is subject to PDF, and the above content is for reference
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