Allicdata Part #: | SQJ963EP-T1_GE3TR-ND |
Manufacturer Part#: |
SQJ963EP-T1_GE3 |
Price: | $ 0.58 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2 P-CH 60V POWERPAK SO8 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 60V 8A (Tc) 27W (T... |
DataSheet: | SQJ963EP-T1_GE3 Datasheet/PDF |
Quantity: | 18000 |
3000 +: | $ 0.52816 |
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Rds On (Max) @ Id, Vgs: | 85 mOhm @ 3.5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1140pF @ 30V |
Power - Max: | 27W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® SO-8 Dual |
Supplier Device Package: | PowerPAK® SO-8 Dual |
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The SQJ963EP-T1_GE3 is an enhancement-mode power field-effect transistor (FET) array specifically developed to provide high-speed switching and low on-resistance performance with low power consumption in portable and cost-sensitive applications. It is suitable for applications such as switching power supplies, motor drivers, and converters.
The SQJ963EP-T1_GE3 is divided into two parts: a logic control section providing the base circuits for control and switch gate drive, and a power switch section consisting of a FET array (including three independent FETs). The logic control section includes a supply voltage detector and a driver/protection circuit. The power switch section includes a low on-resistance FET array, which is controlled by a P-channel FET that acts as a switch in the logic control section. This array device has a built-in pull-up resistor, enabling the logic section to operate from a relatively low power supply voltage. This eliminates the need for a discrete pull-up resistor, thus reducing cost and layout complexity.
The SQJ963EP-T1_GE3 is designed to be a high-speed, low on-resistance device, allowing for improved switching speed and low power consumption when compared to traditional low on-resistance FETs. With a total on-resistance of 25 mΩ and a switching speed of 0.2 ns, it offers excellent thermal performance and eliminates the need for costly heat sinks. Furthermore, its fast switching ability reduces switching losses and improves efficiency in switching power supplies.
The SQJ963EP-T1_GE3 is designed to operate over a wide temperature range, from +105°C to -40°C. It is also designed to be extremely robust against electrical noise and static discharges, making it great for operating on the noisy factory floor. Additionally, it is the perfect solution when the application requires fast switching, low on-resistance, and robust protection against overloads and other faults.
In summary, the SQJ963EP-T1_GE3 is an ideal choice for high-speed power switching applications where low on-resistance and robust protection are desired. It offers excellent thermal performance, reliability, and protection from electrical noise and static discharges, making it the perfect solution for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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