SQJ946EP-T1_GE3 Allicdata Electronics
Allicdata Part #:

SQJ946EP-T1_GE3TR-ND

Manufacturer Part#:

SQJ946EP-T1_GE3

Price: $ 0.22
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2 N-CH 40V POWERPAK SO8
More Detail: Mosfet Array 2 N-Channel (Dual) 40V 15A (Tc) 27W S...
DataSheet: SQJ946EP-T1_GE3 datasheetSQJ946EP-T1_GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.20170
Stock 1000Can Ship Immediately
$ 0.22
Specifications
Series: Automotive, AEC-Q101, TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 33 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V
Power - Max: 27W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerPAK® SO-8 Dual
Description

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SQJ946EP-T1_GE3 is a four-channel high-performance core chip from Shanghai SQ Technology Co., Ltd. This chip is designed for application areas such as audio amplification, instrumentation and control, power amplifiers, and servo control. It primarily employs N-channel Enhancement Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) Array process, which is commonly used in high-frequency switching power amplifiers and power converters.

When compared to traditional bipolar-junction transistors (BJTs), MOSFETs have many advantages. First and foremost, they can provide a much higher transconductance than BJTs, meaning they are able to switch faster and with minimal power loss. MOSFETs also have a higher input impedance and can be used to produce AC signals with minimal distortion. Furthermore, MOSFETs have a much better immunity to noise compared to BJTs. Finally, they are extremely reliable.

At the heart of the SQJ946EP-T1_GE3 chip is an improved N-channel Enhancement Metal-Oxide Semiconductor Field Effect Transistor Array process. This process allows for high-speed switching, which is essential for applications such as audio amplifiers and servo control. Additionally, this process also allows for precise signal control, making it ideal for instrumentation. The SQJ946EP-T1_GE3 chip also features a large amount of I/O pins, making it very easy to connect to external circuitry.

When it comes to the operation principle of the SQJ946EP-T1_GE3 chip, it is relatively straightforward. Put simply, the chip consists of four independent MOSFET transistors in a single package. These transistors can be used to switch different signals or perform linear amplification. Internally, the SQJ946EP-T1_GE3 chip has a variety of protection circuitry, which ensures a high level of reliability and helps to prevent damage to external circuitry.

In conclusion, the SQJ946EP-T1_GE3 chip is a great choice for applications requiring high-frequency switching and linear amplification. The use of N-channel Enhancement Metal-Oxide Semiconductor Field Effect Transistor Array process ensures a fast, reliable, and high-performance solution. The SQJ946EP-T1_GE3 chip also features internal protection circuitry and a large number of I/O pins for easy connection to other systems.

The specific data is subject to PDF, and the above content is for reference

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