SQJ914EP-T1_GE3 Allicdata Electronics
Allicdata Part #:

SQJ914EP-T1_GE3TR-ND

Manufacturer Part#:

SQJ914EP-T1_GE3

Price: $ 0.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2 N-CH 30V POWERPAK SO8
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 30A (Tc) 27W (...
DataSheet: SQJ914EP-T1_GE3 datasheetSQJ914EP-T1_GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.31575
Stock 1000Can Ship Immediately
$ 0.35
Specifications
Series: Automotive, AEC-Q101, TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 15V
Power - Max: 27W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8 Dual
Supplier Device Package: PowerPAK® SO-8 Dual
Description

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SQJ914EP-T1_GE3 is a dual high-voltage MOSFET array. It is ideal for various applications such as high-frequency dc-dc converters, high-side switching for industrial and automotive control, power distribution systems, and general-purpose circuits. It can be used to reduce system cost and complexity, to provide higher reliability, and to optimize power, heat, and size.

The working principle of the SQJ914EP-T1_GE3 is based on a dual high-voltage MOSFET design. This device consists of two independent MOSFETs formed into a single array. Each MOSFET has its own gate and source inputs, as well as its own drain and body terminals. The high-voltage rating and low on-resistance of the device make it an ideal choice for a variety of high-efficiency and low-loss applications.

The SQJ914EP-T1_GE3 can be used in various applications and has a wide range of features and capabilities. It is designed for use in dc-dc converters and power distribution systems, as well as for applications requiring high-voltage switching. It is also suitable for use in applications requiring high-side switching and high-frequency operations, including industrial and automotive control. This device is also suitable for automotive and industrial automatic systems.

In addition, the SQJ914EP-T1_GE3 has excellent switching characteristics and high-speed operation. It is manufactured using advanced technology to ensure optimal performance. It is also suitable for operation in temperatures up to 125°C. Furthermore, it has high surge capability and low power dissipation, making it ideal for high-speed switching applications.

The SQJ914EP-T1_GE3 is an ideal choice for high-efficiency, low-power and high-frequency applications. It is suitable for applications requiring high-voltage switching, high-side switching and high-frequency operations, as well as for dc-dc converters and power distribution systems. This device is designed for optimal performance in temperatures up to 125°C, and it offers high surge capability and low power dissipation. It is also suitable for use in a wide range of industrial and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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