Allicdata Part #: | SQJ914EP-T1_GE3TR-ND |
Manufacturer Part#: |
SQJ914EP-T1_GE3 |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2 N-CH 30V POWERPAK SO8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 30A (Tc) 27W (... |
DataSheet: | SQJ914EP-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.31575 |
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1110pF @ 15V |
Power - Max: | 27W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® SO-8 Dual |
Supplier Device Package: | PowerPAK® SO-8 Dual |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
SQJ914EP-T1_GE3 is a dual high-voltage MOSFET array. It is ideal for various applications such as high-frequency dc-dc converters, high-side switching for industrial and automotive control, power distribution systems, and general-purpose circuits. It can be used to reduce system cost and complexity, to provide higher reliability, and to optimize power, heat, and size.
The working principle of the SQJ914EP-T1_GE3 is based on a dual high-voltage MOSFET design. This device consists of two independent MOSFETs formed into a single array. Each MOSFET has its own gate and source inputs, as well as its own drain and body terminals. The high-voltage rating and low on-resistance of the device make it an ideal choice for a variety of high-efficiency and low-loss applications.
The SQJ914EP-T1_GE3 can be used in various applications and has a wide range of features and capabilities. It is designed for use in dc-dc converters and power distribution systems, as well as for applications requiring high-voltage switching. It is also suitable for use in applications requiring high-side switching and high-frequency operations, including industrial and automotive control. This device is also suitable for automotive and industrial automatic systems.
In addition, the SQJ914EP-T1_GE3 has excellent switching characteristics and high-speed operation. It is manufactured using advanced technology to ensure optimal performance. It is also suitable for operation in temperatures up to 125°C. Furthermore, it has high surge capability and low power dissipation, making it ideal for high-speed switching applications.
The SQJ914EP-T1_GE3 is an ideal choice for high-efficiency, low-power and high-frequency applications. It is suitable for applications requiring high-voltage switching, high-side switching and high-frequency operations, as well as for dc-dc converters and power distribution systems. This device is designed for optimal performance in temperatures up to 125°C, and it offers high surge capability and low power dissipation. It is also suitable for use in a wide range of industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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