Allicdata Part #: | SQJ958EP-T1_GE3-ND |
Manufacturer Part#: |
SQJ958EP-T1_GE3 |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2 N-CH 60V POWERPAK SO8 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 20A (Tc) 35W S... |
DataSheet: | SQJ958EP-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.26778 |
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Rds On (Max) @ Id, Vgs: | 34.9 mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1075pF @ 30V |
Power - Max: | 35W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | PowerPAK® SO-8 Dual |
Supplier Device Package: | PowerPAK® SO-8 Dual |
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The SQJ958EP-T1_GE3 is a type of transistor-based integrated circuit (IC) typically referred to as an array. Generally, this type of IC is used to work with multiple transistors to process or control data signals. It is commonly used for logic, communications, and other kinds of signal applications.
The SQJ958EP-T1_GE3 is a specific type of transistor array – a Field Effect Transistor Array (FET), which typically lends itself to higher power applications than bipolar junction transistors (BJTs). FETs can handle higher voltages, making them ideal for applications with large amounts of data travelling at high speeds compared to BJTs.
The SQJ958EP-T1_GE3 consists of an integrated array of several FETs and utilizes a standard connection between each of the devices in the array. This connection allows the FETs to transceive signals between them quickly, while maintaining signal integrity. This lets the SQJ958EP-T1_GE3 act as a single unit, allowing for data processing and manipulation.
At its most basic level, the SQJ958EP-T1_GE3 has a relatively simple working principle. The transistors in the FET array are arranged in a specific order, and governed by the resistance between each of the transistors. As a voltage is applied to the array, current will flow between each of the transistors, and this current is used to control the flow of data through the array.
When a data signal is sent to the array, it breaks the flow of current between the transistors and signals the array to change state. Depending on the application, this can take the form of different signals being sent to each of the transistors, or the entire array can be influenced by a single signal. When a signal is sent, it causes certain transistors to open, allowing data to flow through the array.
The SQJ958EP-T1_GE3 can be used for a range of applications, including processing and controlling digital signals. It can be used in telecommunications, medical instrumentation, electronic instrumentation, automotive, automotive control, and even automated test equipment (ATE). Using the SQJ958EP-T1_GE3, an engineer can quickly develop a circuit for a range of applications, speeding up the development process.
Overall, the SQJ958EP-T1_GE3 is an ideal FET array for many applications. Its high-speed and low-impedance signals, along with its ability to be easily configured, make it a great choice for many types of circuits. By understanding the basics of its working principle, engineers can quickly create circuits that will work reliably and provide effective data processing.
The specific data is subject to PDF, and the above content is for reference
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