SQJA04EP-T1_GE3

Vgs(th) (Max) @ Id:	3.5V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	68W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3500pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	55nC @ 10V
Series:	Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:	6.2 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SQJA04EP-T1_GE3 is a type of single field effect transistor (FET) typically used to switch electrical signals or for other types of switching applications. This particular transistor is an enhancement-mode, junction-gate FET, and it is designed to operate with minimum input current and power losses. This transistor also has a relatively low on-state resistance as well as an ability to support high switching speeds.The SQJA04EP-T1_GE3 is typically manufactured from silicene, an ultra-thin material with excellent electrical properties. This material provides it with many advantages such as an increased ability to handle high voltage and current loads, as well as providing superior protection against damage from static electricity or radiation. Additionally, the device is extremely small in size, with its overall size being measured in millimeters rather than centimeters.The SQJA04EP-T1_GE3 works on the principle of a continuous electric field, where the electrical field is generated wherever a conductor is placed in close proximity to a semiconductor material. This is what allows the transistor to switch efficiently from “on” to “off” and vice versa without having to dissipate any of the electrical energy as heat, as can be the case with a conventional mechanical switch. As the voltage across the terminals of the transistor increases, this causes a corresponding increase in the electric field strength between the two points, which causes a change in the properties of the semiconductor material. When this occurs, the transistor changes its operating characteristics, including the voltage gain, current flow, and switching speed.The principle of field effect transistors (FETs) can be applied in many areas. For example, they can be used to control the flow of power to electrical components, allowing a device to switch off or reduce its output at a certain voltage or current level. Field effect transistors can also be used to control the output of computer-generated or digital signals. By controlling the amount of current flowing through the device, a computer can adjust the signal to maintain an even output throughout the duration of the program or task.Field effect transistors can also be used in applications involving analogue control. Here, the change in the electric field between the terminals of the device is used to make the device mimic the behaviour of an analogue component. This decreases the amount of circuitry and wiring needed in order to provide electronic components, as well as speeding up the process of building a circuit.The SQJA04EP-T1_GE3 is an excellent choice for any application requiring the use of a single field effect transistor. It is small in size, can be operated at high temperatures, and provides a stable operating environment even in the most challenging conditions. Additionally, its low power loss, high electric field strength, and excellent temperature coefficient make it an ideal choice for operating with low current levels or with high voltage applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description