SQJA62EP-T1_GE3

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SQJA62EP-T1_GE3 is a single high voltage n-channel enhancement mode field effect transistor (FET). It has achieved remarkable performance results across voltage ratings and switching frequencies, making it a popular choice for consumer, industrial and automotive applications, among others. This article will discuss the application fields and working principles of this FET.

Application Fields

The SQJA62EP-T1_GE3 is mainly used in applications where high efficiency and power dissipation is needed. This includes DC-DC converters, automotive power supplies, high power switch-mode power supplies, energy harvesting, converters and rectifiers, motor drivers and voltage regulators. It can be used in both symmetric and asymmetric applications, enabling significant design flexibility. Due to its ultra-low on-resistance and improved thermal performance, the SQJA62EP-T1_GE3 can support a wide range of synchronous and asynchronous switching frequencies. It is also capable of operating over a wide range of input voltages ranging from 6V to 80V.

The SQJA62EP-T1_GE3 is the ideal choice for automotive applications given the fact that it meets the AEC-Q101 specifications. Not only is it reliable and robust, but it also complies with the stringent automotive quality tests. This makes it suitable for use in power windows, door mirrors and brake lights among numerous other applications.

Working Principle

The SQJA62EP-T1_GE3 works on a principle of field effect. This means that it operates with a gate voltage that affects the conductive characteristics of the channel. The voltage across the gate junction determines the current flow between the source and the drain of the device. At low gate currents, the channel is blocked and no current flows between the source and the drain. At higher gate currents, the channel opens and current can flow through it.

In addition to being able to operate over a wide range of input voltages, the SQJA62EP-T1_GE3 also offers a low gate turn-on voltage and a low gate threshold voltage. This ensures that the device operates under the desired conditions without the need for additional power supply. Additionally, the device features an on-resistance of 67mΩ (typical). This ensures that the harmonics generated by the power source are suppressed effectively, resulting in reduced power consumption and improved efficiency.

Conclusion

In conclusion, the SQJA62EP-T1_GE3 is a single high voltage n-channel enhancement mode field effect transistor (FET) that is suitable for use in numerous applications. It offers excellent performance results across voltage ratings and switching frequencies, making it a popular choice for consumers and industrial users alike. Furthermore, it meets AEC-Q101 specifications for automotive applications and is capable of operating over a wide range of input voltages. The device works on a principle of field effect and features a low on-resistance and a low gate threshold voltage. As such, it is an ideal choice for a wide range of high efficiency power applications.

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