SQJA72EP-T1_GE3 Allicdata Electronics
Allicdata Part #:

SQJA72EP-T1_GE3TR-ND

Manufacturer Part#:

SQJA72EP-T1_GE3

Price: $ 0.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CHAN 100V POWERPAK SO-8
More Detail: N-Channel 100V 37A (Tc) 55W (Tc) Surface Mount Pow...
DataSheet: SQJA72EP-T1_GE3 datasheetSQJA72EP-T1_GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.37529
Stock 1000Can Ship Immediately
$ 0.41
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 55W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1390pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs: 19 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SQJA72EP-T1_GE3 is a single Penta-type field effect transistor (FET). It consists of three interconnected transistors and is designed to provide high switching speeds and low on-state values. Used as a switch, it can be used in a range of applications, including various audio/video switching, power management, and communication systems.

The SQJA72EP-T1_GE3 utilizes a single gate, source, and drain configuration. This type of FET is known as a symmetrical channel device, meaning that the current flows in both directions and the gate voltage must be the same for both. As a result, the SQJA72EP-T1_GE3 provides low on-state resistance and very fast switching speeds.

This FET is commonly used in a range of audio and video switching applications, such as device control, power management, and communication systems. In these types of applications, the SQJA72EP-T1_GE3 is well-suited for its high switching speeds, low on-state values, and symmetrical channel design. When combined with other components, the SQJA72EP-T1_GE3 can provide efficient, safe, and reliable operation.

The working principle of the SQJA72EP-T1_GE3 is relatively simple. When a positive voltage is applied to the gate, the gate acts as a barrier and the current flows in one direction only. When the gate voltage is reversed, the current flow is reversed as well. By reversing the gate voltage in alternating sequences, the SQJA72EP-T1_GE3 can be used to provide latching or switching functions.

In summary, the SQJA72EP-T1_GE3 is a single Penta-type FET which is used in a range of audio and video switching, power management, and communication systems. Utilizing a single gate, source, and drain configuration, the SQJA72EP-T1_GE3 provides low on-state resistance and very fast switching speeds. The working principle is based on the ability of the gate voltage to change the direction of current flow, allowing the device to provide latching and switching functions.

The specific data is subject to PDF, and the above content is for reference

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