Vgs(th) (Max) @ Id:	3.5V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8L
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	45W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	670pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	12nC @ 10V
Series:	Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:	32 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	15A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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SQ JA64EP-T1_GE3 Application Field and Working Principle

Introduction

SQ JA64EP-T1_GE3 is a type of transistor which belongs to the range of FETs, MOSFETs - Single. It is a high-performance P-channel enhancement mode MOSFETs especially designed for loadswitch applications. The device has a low RDS(ON) of 16.2 mΩ, making it perfect for working with low voltage. It also has high efficiency due to the low gate capacitance.

Applications

SQ JA64EP-T1_GE3 is used in a variety of applications. It is used in the power switching of loads such as laptops, tablets, mobile phones, and other portable devices. It is also used in the power management of high power audio and video amplifiers, as well as in driving high power LEDs. This device is also used in the power supply applications, as it has low power dissipation and requires less voltage for switching, thus making it more efficient for power management.

Working Principle

SQ JA64EP-T1_GE3 works on the principle of enhancement mode MOSFETs. It is an N-channel semiconductor device and has four terminals:* Source – The source is the ground terminal which is connected to the negative supply and is used to provide current to the device. * Gate – The gate is the control terminal which is used to control the flow of current between the source and the drain. The voltage applied to the gate controls the drain-source current flow.* Drain – The drain is the terminal which is used to sink the current. It is connected to the positive supply. * Body – The body is the substrate and it is usually connected to the source. The device works by applying a voltage, usually between 1.65V and 9V, to the gate of the device. When this voltage is high enough to gate voltage greater than the threshold voltage, then the device conducts and the current flows from source to drain. The higher the gate voltage, the more current flows through the device. When the gate voltage is below the threshold voltage, then the device is turned off, thus no current flows between source and drain.

Conclusion

In conclusion, SQ JA64EP-T1_GE3 is a type of transistor which belongs to the range of FETs, MOSFETs - Single. It is used in many applications, such as power switching of loads, power management of high power audio and video amplifiers, driving high power LEDs, and power supply applications. The device works by applying a voltage to the gate of the device and when this voltage is high enough to gate voltage greater than the threshold voltage, then the device conducts and the current flows from source to drain.

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