SQJA06EP-T1_GE3 Allicdata Electronics
Allicdata Part #:

SQJA06EP-T1_GE3TR-ND

Manufacturer Part#:

SQJA06EP-T1_GE3

Price: $ 0.32
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 57A POWERPAKSO-8
More Detail: N-Channel 60V 57A (Tc) 55W (Tc) Surface Mount Powe...
DataSheet: SQJA06EP-T1_GE3 datasheetSQJA06EP-T1_GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.29212
Stock 1000Can Ship Immediately
$ 0.32
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Package / Case: PowerPAK® SO-8
Supplier Device Package: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 55W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Series: Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SQJA06EP-T1 (Single) is an N-channel enhancement mode power field-effect transistor (FET). A single FET is used to isolate, protect and switch a high-impedance transmission line. The FET is a three-terminal device that provides a low-resistance path between the drain and the source when it is turned on or when it has voltage applied. The amount of current that can be controlled is determined by the value of the gate-source capacitance.

The SQJA06EP-T1_GE3 is designed for use in applications operating in the 15V drain-source voltage range, and offers excellent switching characteristics, fast switching speeds, high breakdown voltage (BVDSS), and low on-resistance (RDS(ON)).

The SQJA06EP-T1_GE3 is ideal for use in logic level, off-line converters, and other AC/DC converter applications, as well as linear and switching voltage regulators, switching power supplies, DC/DC converters, digital isolators, and various RF switching circuits.

The SQJA06EP-T1_GE3’s working principle is based on the movement of electrons between the source and the drain through a channel formed between the source and drain when a voltage is applied to the gate. When a positive voltage is applied to the gate, it attracts influx of electrons from the drain, creating a conductive channel from the source to the drain. This lowers the resistance between the source and the drain and allows current (I DS ) to flow from source to drain. When the source to drain voltage V DS is increased beyond the breakdown voltage (BV DS ), strong electric fields develop in the depletion layer and cause the transistor to become pinched off and the current flow to stop. When the gate voltage is reduced below the threshold voltage, the conductive channel disappears and the FET behaves as an open circuit.

Due to their low on-resistance and low gate charge, the SQJA06EP-T1_GE3 is suitable for applications such as power management and battery related systems, where power dissipation and charge reduction are important considerations. The device is well suited for use in a wide variety of applications, such as handheld, notebook and tablet computers, as well as GPS navigation systems, digital cameras and cell phones.

The SQJA06EP-T1_GE3’s superior electrical and thermal characteristics make it an excellent choice for designers who must consider both performance and cost in their applications. With its highly efficient switching characteristics, it is an excellent choice for applications requiring high switching frequency, minimal ringing, and low on-resistance.

The specific data is subject to PDF, and the above content is for reference

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