SQJA80EP-T1_GE3

The SQJA80EP-T1_GE3 is a single N-Channel HEXFET Power MOSFET from International Rectifier (IR) specifically designed for high-performance power management. It offers an ideal solution for energy-efficient, high-power applications, including synchronous rectification, motor control, OLED/LED lighting, and more. The SQJA80EP-T1_GE3 operates as a switch controlling the flow of current between the drain and source. When the gate voltage is high enough, the MOSFET acts as an open switch, allowing current to freely flow from the drain to the source. When the gate voltage is low, the switch is closed and no current flows between the drain and source. This makes the SQJA80EP-T1_GE3 an ideal switch for a wide variety of applications.

The SQJA80EP-T1_GE3 is a small signal N-channel MOSFET with a resistance rating of 80mΩ, making it a good choice for applications requiring low resistance. The maximum drain current is up to 110A and the maximum drain source voltage up to 100V, allowing for high power applications. This high power MOSFET has a maximum power dissipation of 160W at a junction temperature of 25°C and a thermal impedance of 11 °C/W. Additionally, the MOSFET has a breakdown voltage of 175V and a threshold voltage of between 1.5V and 2.0V. This allows it to be used in voltage controlled circuit applications.

The SQJA80EP-T1_GE3 is widely used in a variety of power management applications. It is most commonly used in synchronous rectification, which is the process of converting alternating current (AC) to direct current (DC) with the help of a MOSFET. This process allows for more efficient power management since the MOSFET is able to achieve greater efficiency compared to traditional diodes. The SQJA80EP-T1_GE3 is also a popular choice for motor control, power conversion, and OLED/LED lighting applications. The MOSFET is able to switch on and off quickly and can handle high power loads, making it a good choice for these types of applications.

The SQJA80EP-T1_GE3 is a single N-channel HEXFET Power MOSFET from International Rectifier (IR). It is suitable for a wide range of high-power applications including synchronous rectification, motor control, OLED/LED lighting and more. The MOSFET has a maximum drain current rating of up to 110A and a maximum power dissipation of 160W. It is capable of operating at breakdown voltages of over 175V, making it an ideal choice for voltage controlled circuit applications. Additionally, the MOSFET can switch on and off quickly, making it a good choice for use in motor control and power conversion applications. All of these features make the SQJA80EP-T1_GE3 an ideal choice for a wide range of high-power applications.