SQJA76EP-T1_GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SQJA76EP-T1_GE3 is a high-frequency single MOSFET (metal-oxide semiconductor field-effect transistor) which can be used in a variety of applications across many industries. The device is well-suited for a wide range of high power handling devices, including switches, amplifiers, drivers and motor controls, to name a few. The architecture of the device features an enhanced ISO-CMOS process, including two MOSFETs in a single package, a source-drain protection element, as well as an efficient low rDS(on) performance.

The MOSFET architecture of the SQJA76EP-T1_GE3 provides the device with efficient performance in terms of switching speed and gate charge. The device features a P+Guard construction for improved tight tolerance characteristics and better ESD protection, allowing it to withstand high-voltage transients. Additionally, the device\'s P-body structure facilitates minimum gate-source capacitance, enabling excellent frequency response and faster switching.

The SQJA76EP-T1_GE3 is an ideal choice for high power switching applications, as it has a drain-source voltage rating of 800 V, a drain-source current rating of 3 A, and an on-resistance of 1.2 mOhms. The device is specifically designed for solid state relays and motor controls, allowing it to bypass the need for large, bulky relays and contactors. The device\'s leading-edge technology also allows it to be used for low-power driver and motor switching motor control applications.

The SQJA76EP-T1_GE3 MOSFET operates on the principle of a metal-oxide-semiconductor field-effect transistor (MOSFET). This type of transistor utilizes an input voltage applied to a metal gate to produce an electric field which in turn controls the current flow through a channel between the source and the drain. The MOSFET architecture also allows it to provide improved speed and efficiency, as the gate charge is low, allowing the device to effectively switch at high frequencies.

The SQJA76EP-T1_GE3 can be used in a variety of applications in a number of industries, including automotive, industrial, and medical. It is particularly useful in switching and power applications, with its 800 V peak drain-source voltage rating and 3 A current rating, enabling it to handle high power supplier voltage requirements. Additionally, its low gate charge and effective gate-source capacitance make it well-suited for high speed switching applications.

In conclusion, the SQJA76EP-T1_GE3 is a high-frequency single MOSFET which is widely used in a variety of high power applications. It features enhanced ISO-CMOS process with two MOSFETs in a single package and an efficient low Rds(on) performance for improved power handling, speed, and efficiency. It has a 800V peak drain-source voltage rating and a 3A current rating, allowing it to handle high power supplier voltage requirements, while its low gate charge and effective gate-source capacitance make it well-suited for high speed switching applications.

The specific data is subject to PDF, and the above content is for reference