
Allicdata Part #: | SQJA84EP-T1_GE3TR-ND |
Manufacturer Part#: |
SQJA84EP-T1_GE3 |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 80V 46A POWERPAKSO-8 |
More Detail: | N-Channel 80V 46A (Tc) 55W (Tc) Surface Mount Powe... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.29212 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 55W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2100pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 12.5 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 46A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQJA84EP-T1_GE3 is a single field effect transistor (FET) widely used in many applications due to its high level of efficiency and wide operating range. It belongs to a field effect transistor family that includes metal oxide semiconductor FETs (MOSFETs), junction FETs (JFETs), and depletion mode FETs (DMFETs). It is ideal for many high-power applications, including power conversions, frequency characteristic improvement, and wireless communication.
A field effect transistor is a three-terminal semiconductor device that uses a field effect to modulate the conductance. Transconductance, or the rate of change of drain current to gate voltage, is the predictable and controllable response of a FET. In FETs, the drain and source are semiconductor devices, rather than metal devices, so the gate voltage can be used to control the current through the device. This makes the SQJA84EP-T1_GE3 effective for switching, attenuation and amplification.
The SQJA84EP-T1_GE3 is an enhancement-type MOSFET, featuring an insulated gate. Enhancement-type MOSFETs can be found in many kinds of analog circuits such as voltage amplifiers, analog pulse-width modulators, and current-mode control circuits. They are also used in digital circuits such as logic gates, flip-flops, memory circuits, or any application that requires an appreciation of small voltage changes.
The main working principle behind the SQJA84EP-T1_GE3 is its gate-source voltage, which is the difference in voltage between the gate and source terminals. This voltage controls the device current flow. In an Enhanced-type MOSFET, applying a positive gate-source voltage increases the number of carriers in the channel, allowing them to easily move in and out of the channel, thus increasing the drain current. Conversely, when the gate-source voltage is negative, the number of carriers in the channel is reduced, thus decreasing the drain current.
The SQJA84EP-T1_GE3 is designed for a variety of applications, including power supply circuits, automotive applications, and industrial automation. It is especially useful in power switching applications such as PWM control, as it allows for better efficiency due to its fast switching time. It is also used in amplifier, attenuator, and filtering circuits, as it can provide accurate and stable performance. Additionally, the SQJA84EP-T1_GE3 is commonly used in frequency characteristic improvement and improved output voltage ripple.
The SQJA84EP-T1_GE3 is an excellent choice for many applications due to its high level of efficiency and wide operating range. Its enhancement-type structure makes it an ideal device for applications that require an appreciation of small voltage changes, such as digital logic circuits, PWM modulation, and frequency characteristic improvement. Its wide operating range, combined with its fast switching time, make it an ideal device for power switching applications.
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Part Number | Manufacturer | Price | Quantity | Description |
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SQJA00EP-T1_GE3 | Vishay Silic... | 0.27 $ | 1000 | MOSFET N-CH 60V 30A POWER... |
SQJA34EP-T1_GE3 | Vishay Silic... | 0.33 $ | 1000 | MOSFET N-CH 40V 75A POWER... |
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SQJA82EP-T1_GE3 | Vishay Silic... | 0.35 $ | 1000 | MOSFET N-CH 80V 60A POWER... |
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SQJA02EP-T1_GE3 | Vishay Silic... | 0.39 $ | 1000 | MOSFET N-CH 60V 60A POWER... |
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