SQJA82EP-T1_GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SQJA82EP-T1_GE3 is a single enhancement–mode field-effect transistor (FET) manufactured by Shanghai Qingxuan Intelligent Technology Co., Ltd. It features an excellent combination of power, performance and flexibility, while it also has low on-state resistance and low gate drive requirements. This makes it an ideal choice for a variety of applications, especially in automotive and power control, and many other applications.

The SQJA82EP-T1_GE3 is a silicon-based FET which is widely used in voltage-controlled devices. It is constructed in a symmetrical three-terminal structure and operates by having an applied voltage applied to the gate, usually in the range of 0.1 to 12 Volts. The gate acts as a voltage-controlled resistor which then controls the current flow between the source and drain, by controlling the resistance of the drain-source channel. The resistance between source and drain is known as ‘on-state resistance’ and is the most important performance parameter for a FET. It is typically about 0.1 or 0.2 ohms for the SQJA82EP-T1_GE3, this is low enough to make it an ideal choice for many applications which require low currents to be controlled.

The SQJA82EP-T1_GE3 is a popular choice for many switching applications due to its low ‘on-state’ resistance and low gate drive requirements. It is especially used in automotive and power control applications, as it features a low ‘on-state’ resistance of 0.1 - 0.2 ohms. Automotive and power control applications require low drive current to operate, which is met perfectly by the SQJA82EP-T1_GE3. In addition, the low gate drive requirements make it an attractive choice for designers in that sector.

Moreover, the SQJA82EP-T1_GE3 is also used in relay applications. It is used as a switching contact; when the applied voltage is removed, the gate opens and turns on the relay. This makes it ideal for controlling large currents and high voltage outputs. In addition, the SQJA82EP-T1_GE3 also features an excellent combination of power, performance and flexibility.

The SQJA82EP-T1_GE3 is also used in radio frequency (RF) applications due to its low ‘on-state’ resistance and low gate drive requirements. It is used to control the impedance of an electrical circuit, allowing transmission at different frequencies. It is also used in wireless applications to control the frequency of an oscillating signal, enhancing signal reception.

The SQJA82EP-T1_GE3 is also used in audio applications, such as amplifiers, where it can be used to control the voltage and current of the amplifying device. It allows for the amplifying device to be controlled precisely over a range of frequencies, meaning it can be used to produce a clean, precise sound. It can also be used in mixers and digital signal processors for the same reason.

In conclusion, the SQJA82EP-T1_GE3 is a single enhancement–mode field-effect transistor (FET) which offers an excellent combination of power, performance and flexibility. This makes it an ideal choice for a wide range of applications, such as automotive and power control, relay applications, radio frequency applications and audio applications. Its low ‘on-state’ resistance and low gate drive requirements make it the perfect choice for many applications which require low drive current and high efficiency.

The specific data is subject to PDF, and the above content is for reference