SQJA86EP-T1_GE3 Discrete Semiconductor Products

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The SQJA86EP-T1_GE3 is a single n-channel enhancement-mode MOSFET, manufactured by Seiko, which is used in a variety of applications. It has an exceptionally low RDS(on), high blocking voltage, and excellent channel temperature stability. The device is a popular choice for general purpose applications, such as high frequency switching, and DC-DC conversion.

The SQJA86EP-T1_GE3 device is a discrete MOSFET with an in-built Drain-Source resistance, and operates in an enhancement-mode. It consists of a single n-channel MOSFET (p-type Metal Oxide Semiconductor Field Effect Transistor) which is a three-terminal device with its gate, source and drain terminals. A small voltage applied to the gate of the device can control the large current flow from the source to the drain.

When no voltage is applied to the gate of the device, the source-drain channel is pinched off, and no current flows through it. When a positive gate-source voltage is applied, a large channel is created between the source and the drain. The current flow through the channel is controlled by the gate voltage. When the voltage is high enough, the current flow can be maximized, thus allowing the device to operate as a switch.

The main features of the SQJA86EP-T1_GE3 device include its low RDS(on), high blocking voltage and excellent channel temperature stability. The device has a low RDS(on) of 0.02 Ohms, which allows it to switch quickly and efficiently, without wasting a lot of energy. It also has a high blocking voltage rating of 70 volts which makes it suitable for use in DC-DC converter applications. Lastly, its excellent channel temperature stability ensures that the device is reliable and won’t degrade in performance due to high temperatures.

The SQJA86EP-T1_GE3 is used in a variety of applications, from high frequency switching, to DC-DC conversion. It is a popular choice for general purpose applications, such as motor control, industrial equipment, and lighting. The device is also suitable for use in battery management systems due to its low RDS(on) and high blocking voltage.

In summary, the SQJA86EP-T1_GE3 is a single n-channel enhancement-mode MOSFET manufactured by Seiko, which is used in a variety of applications. It has an exceptionally low RDS(on), high blocking voltage, and excellent channel temperature stability. It is a popular choice for general purpose applications, such as high frequency switching and DC-DC conversion. The device is also suitable for use in battery management systems due to its low RDS(on) and high blocking voltage.

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