SSM3J132TU,LF Allicdata Electronics
Allicdata Part #:

SSM3J132TULFTR-ND

Manufacturer Part#:

SSM3J132TU,LF

Price: $ 0.14
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: X34 PB-F SMALL LOW ON RESISTANCE
More Detail: P-Channel 12V 5.4A (Ta) 500mW (Ta) Surface Mount U...
DataSheet: SSM3J132TU,LF datasheetSSM3J132TU,LF Datasheet/PDF
Quantity: 21000
3000 +: $ 0.12577
Stock 21000Can Ship Immediately
$ 0.14
Specifications
Vgs(th) (Max) @ Id: 1V @ 1mA
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: UFM
Mounting Type: Surface Mount
Operating Temperature: 150°C
Power Dissipation (Max): 500mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 10V
Vgs (Max): ±6V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
Series: U-MOSVI
Rds On (Max) @ Id, Vgs: 17 mOhm @ 5A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SSM3J132TU,LF is a type of field-effect transistor (FET) used for a variety of purposes in electronic circuits. As a type of transistor, it has several advantages over other types. It has a high input impedance, low output impedance and provides fast switching speeds. Its application field and working principle make it an ideal device in a variety of applications.

FETs, or field effect transistors, are three-terminal active devices that effectively function as voltage-controlled current sources. They are composed of two main components: a source and a drain, separated by a channel of semiconductor material flanked by two gates. The electrical characteristics of FETs are defined by the operational principles of the gate and the voltage or current signals applied to the source and the drain.

The SSM3J132TU,LF belongs to a category of FETs known as n-channel enhancement-mode MOSFETs (Metal Oxide Semiconductor FETs). This type of FET is composed of a three-layer structure of N-type and P-type semiconductor materials. In the SSM3J132TU,LF, there is an N-type source and drain connected to a P-type channel. When a positive voltage is applied to the gate, a conductive pathway is created between the source and drain, allowing a current to flow. This is known as the drain-source current, and it is the main indicator of the device’s operation.

The main application fields of the SSM3J132TU,LF include digital, analog, and radio-frequency switching circuits. Because of its high input impedance and low output impedance, it is commonly used in power supplies and power converters. Its fast switching speed makes it ideal for use in switching applications such as electromechanical relays, converters and frequency multiplier circuits. The SSM3J132TU,LF can also be used in voltage and current amplifiers, as well as in signal conditioning circuits.

The SSM3J132TU,LF is also well-suited for use in low-frequency analog applications. This is due to the fact that its input and output characteristics are highly linear, making it ideal for use in applications such as filters and regulated power supply circuits. The SSM3J132TU,LF can also be used in audio and video signal processing circuits, as well as in motor control systems.

The SSM3J132TU,LF is a very versatile transistor and has a wide variety of applications. Its wide range of capabilities makes it an ideal choice for many electronic projects. As with all transistors, however, it is important to remember that improper use and incorrect connections can damage the device. By carefully following the manufacturer’s specifications and proper usage guidelines, the SSM3J132TU,LF can be a very reliable and effective component of any electronic circuit.

The specific data is subject to PDF, and the above content is for reference

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