SSM3J130TU,LF

Vgs(th) (Max) @ Id:	1V @ 1mA
Package / Case:	3-SMD, Flat Leads
Supplier Device Package:	UFM
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	500mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1800pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	24.8nC @ 4.5V
Series:	U-MOSVI
Rds On (Max) @ Id, Vgs:	25.8 mOhm @ 4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	4.4A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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SSM3J130TU,LF is a single N-Channel Enhancement Mode Field Effect Transistor (FET), made by Renesas Electronics, that can be used in any situation requiring an electrically-controlled switch. It is ideal for applications where rapid switching and high-efficiency power transmission are critical.The SSM3J130TU,LF is a highly reliable device and has a low on resistance of 80 mΩ and a maximum Drain-Source voltage of 30V. The device is designed to provide an even and reliable source of current, which makes it ideal for controlling higher-power loads. It is suitable for applications such as motor control and power regulation, or any situation that requires an efficient electrical switch.The SSM3J130TU,LF is based on MOSFET technology, which works on the principle of gate voltage controlling the flow of current through the MOSFET. As the gate voltage is increased, the electrical field around the drain and source terminals of the transistor is increased, allowing it to conduct more current. The transition from cut-off to saturation happens when the gate voltage increases enough to completely deplete the channel between the source and drain terminals.As the MOSFET works on a voltage (rather than a resistive) load, it has many advantages over its counterpart, the BJT transistor. First, it is able to carry much higher currents than a BJT, due to its lower channel resistance. Secondly, it is able to provide a much faster switching time, as the transition from cut-off to saturation occurs in the order of microseconds rather than milliseconds. Lastly, it has a much higher linear control range, allowing the device to be used more precisely. In terms of performance, the SSM3J130TU,LF offers a strong electrical field, providing reliable signal dispersion for switching operations. The device also has a low on resistance of 80 mΩ, and a maximum Drain-Source voltage of 30V, allowing it to be used in most situations requiring an efficient switch or regulator. In addition to excellent performance and reliability, the SSM3J130TU,LF is also known for its low power consumption and heat management. The device operates at a quiescent current of only 35μA, allowing it to generate negligible heat even when active. This means that it can be used in areas with high ambient temperatures without worrying about overheating or power issues.Overall, the SSM3J130TU,LF is an ideal choice for applications requiring an efficient and reliable switch. It is suitable for motor control, power regulation, and other situations that require a switch that can rapidly and accurately handle higher-power loads. With its low power consumption and excellent heat management, the SSM3J130TU,LF is an excellent choice for any situation requiring an efficient electrical switch or regulator.

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