Allicdata Part #: | SSM3K15CT(TPL3)TR-ND |
Manufacturer Part#: |
SSM3K15CT(TPL3) |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 30V 0.1A CST3 |
More Detail: | N-Channel 30V 100mA (Ta) 100mW (Ta) Surface Mount ... |
DataSheet: | SSM3K15CT(TPL3) Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.05502 |
Series: | π-MOSVI |
Packaging: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4V |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: | 1.5V @ 100µA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 7.8pF @ 3V |
FET Feature: | -- |
Power Dissipation (Max): | 100mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | CST3 |
Package / Case: | SC-101, SOT-883 |
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SSM3K15CT; Application Field and Working Principle
The SSM3K15CT is a N-Channel, surface mount, enhancement mode Power MOSFET which uses the latest reduced insertion resistance technology to reduce on-state resistance and reduce conduction loss.
The SSM3K15CT is designed as a low on resistance device which provides high performance in a small package and is ideal for battery operated systems. The SSM3K15CT is suitable for applications requiring low gate charge and low gate resistance. The device provides a high degree of protection against over-temperature and over-current conditions due to its low output capacitance and low thermal resistance.
Features of the SSM3K15CT
- Small package
- Low on resistance
- High voltage
- High accuracy
- High reliability
- High peak current capability
- High immunity to ESD
- Low gate charge
- Low thermal resistance
Application field
The SSM3K15CT can be used in a wide range of applications such as motor control, DC-DC converters, power supplies, power switches, and more due to its small size and high performance. Its small size allows it to be used in applications where space is at a premium such as consumer electronics.
The SSM3K15CT is well-suited for automotive applications, due to its immunity to ESD and the high current handling capability. The device can also be used in consumer electronics such as portable radios, computers and other consumer electronics.
Working Principle
The SSM3K15CT is an N-Channel, surface mount, enhancement mode Power MOSFET. The device uses two junctions, source and drain, to transfer power from source to drain. The control of the device is achieved through the gate. When a positive voltage is applied to the gate, current flows from source to drain. This is due to the depletion of the surface charge layer in the gate dielectric which allows the electrons to flow. When the gate voltage is removed, the current stops flowing due to the presence of the gate voltage.
The SSM3K15CT uses an optimized gate form to reduce gate resistance and lower gate charge, which results in a low conduction loss, reduced temperature rise and improved electrical performance. The device provides high peak power performance, low on-resistance and high immunity to ESD.
In conclusion, the SSM3K15CT is a low-resistance, low-gate charge device which provides high peak and holding current capability, low conduction loss and low thermal resistance. The device is ideal for a wide range of applications such as motor control, DC-DC converters, and power supplies.
The specific data is subject to PDF, and the above content is for reference
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