SSM3K17FU,LF Allicdata Electronics
Allicdata Part #:

SSM3K17FULFTR-ND

Manufacturer Part#:

SSM3K17FU,LF

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 50V 0.1A USM
More Detail: N-Channel 50V 100mA (Ta) 150mW (Ta) Surface Mount ...
DataSheet: SSM3K17FU,LF datasheetSSM3K17FU,LF Datasheet/PDF
Quantity: 45000
3000 +: $ 0.03999
Stock 45000Can Ship Immediately
$ 0.04
Specifications
Series: π-MOSV
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Rds On (Max) @ Id, Vgs: 20 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Vgs (Max): ±7V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
FET Feature: --
Power Dissipation (Max): 150mW (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: USM
Package / Case: SC-70, SOT-323
Description

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SSM3K17FU,LF, otherwise referred to as SOFET, is a popular and reliable field-effect transistor. Its operation is based on the voltage-controlled principle, which makes it attractive and highly useful in many applications. In this article, we will look at the SOFET\'s operating principles, features, and applications.

The SSM3K17FU,LF is a single-gate metal-oxide field-effect transistor. It uses one channel of by substrate design and possesses depletion type channel protection. Essentially, the SSM3K17FU,LF includes a gate electrode between the two semiconductor layers of p-type and n-type. When the gate voltage is applied, the electrical current flows through the channel between the two semiconductor layers. This is the basis of the FET\'s operation and allows for reversible amplification and switching of electrical signals.

One of the greatest advantages of the SSM3K17FU,LF is its fast response time, particularly when compared to other transistors. Its high switching speed, low source-drain capacitance, and fast switching time make the SOFET especially attractive for integration in high-frequency applications. Other advantages include a high input impedance and very low noise level.

According to its datasheet, the SSM3K17FU,LF is suitable for use in a variety of applications. Some of these include power management, DC/DC converters, motor control, and simple logic Circuits. It can also provide exceptional performance in power amplifiers, zero-voltage switching, or in frequency synthesizers. The SOFET is also widely used in audio amplifiers, as it allows for high power applications yet results in very low losses.

In conclusion, the SSM3K17FU,LF is a reliable and versatile field-effect transistor that is suitable for a wide range of applications. Its voltage-controlled operation provides high switching speeds and low source-drain capacitance. It also features a high input impedance, fast response times, and very low noise. As a result, the SSM3K17FU,LF is an ideal choice for integration in high-frequency, low-loss applications such as audio amplifiers, DC/DC converters, power management, motor control, and zero-voltage switching.

The specific data is subject to PDF, and the above content is for reference

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