SSM3K35MFV(TPL3)

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The SSM3K35MFV (TPL3) is a small signal discrete MOSFET device from Toshiba, suitable for general purpose switching and amplifier applications. It features very low power consumption and a low on-resistance which makes it an ideal solution for power control, voltage control and low-noise switching applications. This device has a relatively low breakdown voltage of 4.5V, meaning it is suitable for low voltage applications.

The SSM3K35MFV (TPL3) is a single N-Channel Depletion-Mode MOSFET, meaning it is normally off. It is built using a MOSFET process, which is a type of semiconductor fabrication technique used to construct field effect transistors (FETs). This type of construction is often referred to as a semiconductor-insulated gate field effect transistor (IGFET). It allows a large number of transistors to be constructed on a small area, meaning this device is particularly suitable for miniaturized circuit designs.

In operation, the SSM3K35MFV (TPL3) relies on the principle of metal-oxide-semiconductor (MOSFET) enhancement. When a small control voltage is applied to the Gate terminal, electrons from the Substrate are allowed to flow from the Source terminal to the Drain terminal. The Gate voltage determines the precise quantity of electrons passing through the device. This capability allows precise control of the current passing through the device, making it suitable for amplification and switching applications.

The SSM3K35MFV (TPL3) also features fairly low capacitance values, compared to other types of MOSFET devices. This reduces the switching time, making it an ideal solution for high-speed switching applications that require quick response times. Furthermore, the device features low power consumption, meaning that it is ideal for battery-powered equipment.

In addition to the features already mentioned, the SSM3K35MFV (TPL3) is also suitable for both AC and DC applications. It features good dv/dt immunity, MOSFET gate protection, symmetric piezo characteristics, and low reverse transfer capacitance. All of these features make it an ideal solution for a wide range of applications, including power control, voltage control, and low-noise switching.

In conclusion, the SSM3K35MFV (TPL3) is a single N-Channel Depletion-Mode MOSFET device that is suitable for a wide range of applications. Its low power consumption and low on-resistance make it ideal for power control and low-noise switching applications. Its quick switching time also makes it suitable for high-speed switching applications. Furthermore, it also features good dv/dt immunity, MOSFET gate protection, symmetric piezo characteristics and low reverse transfer capacitance. All of these features make it an ideal solution for many applications and make it one of the most popular MOSFET devices on the market today.

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