SSM3K17SU,LF Allicdata Electronics
Allicdata Part #:

SSM3K17SULFTR-ND

Manufacturer Part#:

SSM3K17SU,LF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 50V 100MA USM
More Detail: N-Channel 50V 100mA (Ta) 150mW (Ta) Surface Mount ...
DataSheet: SSM3K17SU,LF datasheetSSM3K17SU,LF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 20 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id: 1.5V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 3V
FET Feature: --
Power Dissipation (Max): 150mW (Ta)
Operating Temperature: --
Mounting Type: Surface Mount
Supplier Device Package: USM
Package / Case: SC-70, SOT-323
Description

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Introduction

SSM3K17SU,LF is a single MOSFET which belongs to a family of field-effect transistors (FETS). This type of transistor is commonly used for power switching and motor-controlling applications, and often chosen for its low resistance, low drain-source capacitance, and high linearity.

Construction

SSM3K17SU,LF MOSFET is built on a silicon substrate and consists of an insulated-gate bipolar transistor (IGBT) layer, an isolation layer, and a depletion-mode depletion-loaded MOSFET. These layers create a junction field-effect transistor which has a higher current and lower resistance than p-channel MOSFETs. The drain and source terminal of the transistor extend out of the package and allow a voltage to be applied to the gate to control the current through the channel.

Working Principle

MOSFETs work on the principle of capacitance. The gate (or control) voltage between the gate terminal and the semiconductor material controls the conducting property of the channel. When the voltage is increased, more electrons move away from the gate and towards the channel, resulting in a higher current through the channel. When the voltage is decreased, fewer electrons move away from the gate and towards the channel, resulting in a lower current through the channel. This process is known as capacitance modulation.

Applications

SSM3K17SU,LF MOSFETs are used in a wide variety of applications, including power switching and motor control, voltage regulator circuits, switching regulators, and other power management applications.The low resistance, low drain-source capacitance, and high linearity of the SSM3K17SU,LF make it an ideal choice for applications that require high efficiency and low power dissipation. These include power converters and DC/DC converters, motor controllers, and other power management applications.

Conclusion

SSM3K17SU,LF is a single MOSFET which belongs to a family of field-effect transistors (FETS). It is an ideal choice for applications that require high efficiency and low power dissipation and is commonly used for power switching and motor-controlling applications. The gate voltage between the gate terminal and the semiconductor material controls the conducting property of the channel and is responsible for the MOSFET’s low resistance, low drain-source capacitance, and high linearity.

The specific data is subject to PDF, and the above content is for reference

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