Allicdata Part #: | SSM3K17SULFTR-ND |
Manufacturer Part#: |
SSM3K17SU,LF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 50V 100MA USM |
More Detail: | N-Channel 50V 100mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | SSM3K17SU,LF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 50V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Rds On (Max) @ Id, Vgs: | 20 Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id: | 1.5V @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | 7pF @ 3V |
FET Feature: | -- |
Power Dissipation (Max): | 150mW (Ta) |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | USM |
Package / Case: | SC-70, SOT-323 |
Description
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Introduction
SSM3K17SU,LF is a single MOSFET which belongs to a family of field-effect transistors (FETS). This type of transistor is commonly used for power switching and motor-controlling applications, and often chosen for its low resistance, low drain-source capacitance, and high linearity.Construction
SSM3K17SU,LF MOSFET is built on a silicon substrate and consists of an insulated-gate bipolar transistor (IGBT) layer, an isolation layer, and a depletion-mode depletion-loaded MOSFET. These layers create a junction field-effect transistor which has a higher current and lower resistance than p-channel MOSFETs. The drain and source terminal of the transistor extend out of the package and allow a voltage to be applied to the gate to control the current through the channel.Working Principle
MOSFETs work on the principle of capacitance. The gate (or control) voltage between the gate terminal and the semiconductor material controls the conducting property of the channel. When the voltage is increased, more electrons move away from the gate and towards the channel, resulting in a higher current through the channel. When the voltage is decreased, fewer electrons move away from the gate and towards the channel, resulting in a lower current through the channel. This process is known as capacitance modulation.Applications
SSM3K17SU,LF MOSFETs are used in a wide variety of applications, including power switching and motor control, voltage regulator circuits, switching regulators, and other power management applications.The low resistance, low drain-source capacitance, and high linearity of the SSM3K17SU,LF make it an ideal choice for applications that require high efficiency and low power dissipation. These include power converters and DC/DC converters, motor controllers, and other power management applications.Conclusion
SSM3K17SU,LF is a single MOSFET which belongs to a family of field-effect transistors (FETS). It is an ideal choice for applications that require high efficiency and low power dissipation and is commonly used for power switching and motor-controlling applications. The gate voltage between the gate terminal and the semiconductor material controls the conducting property of the channel and is responsible for the MOSFET’s low resistance, low drain-source capacitance, and high linearity.The specific data is subject to PDF, and the above content is for reference
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