Allicdata Part #: | SSM3J14TTE85LFTR-ND |
Manufacturer Part#: |
SSM3J14TTE85LF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CH 30V 2.7A TSM |
More Detail: | P-Channel 30V 2.7A (Ta) 700mW (Ta) Surface Mount T... |
DataSheet: | SSM3J14TTE85LF Datasheet/PDF |
Quantity: | 1000 |
Series: | U-MOSII |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 2.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 85 mOhm @ 1.35A, 10V |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 413pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TSM |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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When it comes to transistors, FETs and MOSFETs, the SSM3J14TTE85LF is a type of single into the equation. Understanding its application field and working principle is essential when choosing to use this important electronic component.
Applications fields for the SSM3J14TTE85LF are expansive and include use in both high- and low-power designs. Its versatility contributes to its versatility, making it a great choice for products that need not only high precision but also low losses. Examples of products where the SSM3J14TTE85LF is often used include switching regulators, high quality audio amplifiers, AM/FM radio circuits and more.
As for the working principle behind the SSM3J14TTE85LF, it is a type of a field-effect transistor. This means that it is constructed by utilizing a series of gate electrodes and metal gate rings. A gate voltage is applied to the device, creating a change in current flow between the source and drain. This type of transistor is also height adjustable, allowing designers to customize the switching characteristics of their designs.
In terms of implementation, the SSM3J14TTE85LF is capable of being manipulated as an enhancement as well as a depletion mode device. When used as an enhancement mode device, it is capable of operating in both linear and switching modes. It is a very reliable transistor and its temperature range is from -55°C to 150°C.
Designers looking to optimize the performance of their power supplies should take note of the SSM3J14TTE85LF\'s dynamic operation. One of its most beneficial features is its ability to maximize switching speed without compromising output voltage. This transistor is able to achieve higher energy efficiency and increased switching performance over a comparable linear device.
Within its application fields and working principle, the SSM3J14TTE85LF is a dependable, versatile and efficient device that provides a myriad of benefits to electronic users. Depending on the specific requirements, this field-effect transistor is a great choice for applications that demand precision, high speed and power conservation.
The specific data is subject to PDF, and the above content is for reference
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