SSM3J353F,LF Allicdata Electronics
Allicdata Part #:

SSM3J353FLFTR-ND

Manufacturer Part#:

SSM3J353F,LF

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: X34 PB-F SMALL LOW ON RESISTANE
More Detail: P-Channel 30V 2A (Ta) 600mW (Ta) Surface Mount S-M...
DataSheet: SSM3J353F,LF datasheetSSM3J353F,LF Datasheet/PDF
Quantity: 1000
3000 +: $ 0.06231
Stock 1000Can Ship Immediately
$ 0.07
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: S-Mini
Mounting Type: Surface Mount
Operating Temperature: 150°C
Power Dissipation (Max): 600mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 159pF @ 15V
Vgs (Max): +20V, -25V
Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V
Series: U-MOSVI
Rds On (Max) @ Id, Vgs: 150 mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SSM3J353F,LF is a type of field-effect transistor used in a variety of applications. It belongs to a category of transistors known as MOSFETs, which stands for Metal-Oxide Semiconductor Field Effect Transistors. The SSM3J353F,LF is a single-gate FET, or field effect transistor. As the name implies, this type of transistor is composed of a single active region or gate, located between two major terminal contacts, the source and the drain. The gate of the SSM3J353F,LF is made of semiconductor material, which can be either N-type or P-type, depending on the application.

MOSFETs are widely used in modern electronics and they are considered to be one of the most important components in an integrated circuit. They offer a range of advantages over traditional transistors, including smaller size and lower power consumption. They are also more efficient in terms of current flow, since they do not require additional voltage to be applied to them to turn them on.

The working principle of the SSM3J353F,LF is based on the concept of a current regulator. When a voltage is applied to the gate contact of the transistor, a certain amount of current is allowed to flow through the source-drain channel. This current is proportional to the applied voltage and is regulated by the gate-to-source voltage. When the source-drain voltage is increased, the current allowed to flow through the channel is also increased. This allows for accurate control of the current flowing through the channel, and thus the SSM3J353F,LF acts as a current regulator.

The SSM3J353F,LF is commonly used in digital circuits, as it can be used to create highly accurate logic gates. It is also used in analog circuits, such as power amplifiers, as its low power consumption allows for less power expenditure. In addition, its small size makes it ideal for applications where space is a crucial factor. The SSM3J353F,LF is also used in motor control circuits, where it is used to control the speed of the motor.

The SSM3J353F,LF is one of the most popular and widely used field-effect transistors. It is used in a wide variety of applications, ranging from digital circuits to motor control. With its small size, low power consumption and high accuracy, it is one of the most important components in modern electronics.

The specific data is subject to PDF, and the above content is for reference

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