SSM3J120TU,LF Discrete Semiconductor Products

Series:	U-MOSIV
Packaging:	Tape & Reel (TR)
Part Status:	Not For New Designs
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4V
Rds On (Max) @ Id, Vgs:	38 mOhm @ 3A, 4V
Vgs(th) (Max) @ Id:	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	22.3nC @ 4V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	1484pF @ 10V
FET Feature:	--
Power Dissipation (Max):	500mW (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	UFM
Package / Case:	3-SMD, Flat Leads

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Introduction

The SSM3J120TU is a high efficiency N-Channel enhancement mode Field Effect Transistor that is designed and manufactured by Toshiba Semiconductor. This transistor is specially designed for use in consumer electronics applications such as LCD TVs, DVD players and monitors. The SSM3J120TU is a high-performance device that can provide superior performance in a wide range of applications.

Features

The SSM3J120TU features a wide range of features that make it an ideal choice for a variety of applications. These features include:

• Low on-resistance (Ro): The SSM3J120TU offers an exceptionally low on-resistance of 1.3 ohms.
• High voltage rating: The SSM3J120TU can withstand a drain to source voltage of up to 20V.
• Low gate charge: The SSM3J120TU has a gate charge of 0.5 V/ns, making it ideal for high-frequency switching applications.
• Low leakage current: The SSM3J120TU has an ultra-low leakage current of 0.02µA.
• High speed: The SSM3J120TU has a high speed of 500nS.
• High breakdown voltage: This transistor has a high breakdown voltage of 25V.
• High efficiency: The SSM3J120TU has a high efficiency of up to 99%.

Application Fields and Working Principle

The SSM3J120TU is designed for use in a wide range of applications. In general, this transistor is suitable for use as a high-efficiency switching device. This means that it can be used to switch power supplies on and off quickly and efficiently. The SSM3J120TU is also suitable for use in a variety of other applications such as boost converters and current limiters. The main principle behind the SSM3J120TU is the utilization of field-effect technology. This technology works by using an electric field to control the voltage and current through the transistor. The SSM3J120TU is a high-speed N-channel enhancement mode FET, which means that it has an N-type channel and a P-type source and drain. When the gate-to-source voltage is higher than the threshold voltage, electrons are drawn into the channel, allowing current to flow between the source and drain. This allows the SSM3J120TU to be used to switch power supplies on and off quickly and efficiently.

Conclusion

The SSM3J120TU is a high-efficiency N-Channel enhancement mode Field Effect Transistor that is designed and manufactured by Toshiba Semiconductor. This transistor is specially designed for use in consumer electronics applications such as LCD TVs, DVD players and monitors. The SSM3J120TU features an exceptionally low on-resistance of 1.3 ohms, a high voltage rating of up to 20V and a low leakage current of 0.02µA. It is suitable for use as a high-efficiency switching device, and can be used in a variety of other applications such as boost converters and current limiters. The main principle behind the SSM3J120TU is the utilization of field-effect technology, which utilizes an electric field to control the voltage and current through the transistor.

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