Allicdata Part #: | SSM3J56MFVL3FTR-ND |
Manufacturer Part#: |
SSM3J56MFV,L3F |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CH 20V 0.8A VESM |
More Detail: | P-Channel 20V 800mA (Ta) 150mW (Ta) Surface Mount ... |
DataSheet: | SSM3J56MFV,L3F Datasheet/PDF |
Quantity: | 40000 |
8000 +: | $ 0.05216 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | SOT-723 |
Supplier Device Package: | VESM |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 150mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 100pF @ 10V |
Vgs (Max): | ±8V |
Series: | U-MOSVI |
Rds On (Max) @ Id, Vgs: | 390 mOhm @ 800mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 800mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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.
SSM3J56MFV,L3F is a Power Mosfet (Metal Oxide Semiconductor Field Effect Transistor, or MOSFET) belonging to the type of single junction FETs. This device is designed specifically for high-current, high-side switch applications, and is rated for voltage operation at between 8V and 55V.
The MOSFET is a type of transistor which can be used to switch large currents and voltages with a low-power input. These semi-conductor devices provide fast switching response times and superior noise immunity compared to many other components. As a result, they are widely used in power conversion applications, such as DC-DC converters and other high-current, high-voltage switches.
The SSM3J56MFV,L3F is an enhancement type Power MOSFET which has a Drain-Source current capability of up to 65A and can handle Peak Drain-Source voltage of up to 100V. It also has a very low on-state resistance, or RDS(ON), of typically 28 mOhms at 10V. This device also has an excellent Gate-to-Source capacitance, or CGD, which is very important for high frequency gate drive applications.
The basic principle behind MOSFETs is the use of an electric field to control the flow of current between the Drain and Source. This electric field works by allowing current to flow from the Drain to the Source when the Gate voltage is positive with respect to the Source, and by blocking current when the Gate voltage is negative with respect to the Source. This process is known as electron conduction, as the electric field controls the movement of electrons between Drain and Source.
The application fields of the SSM3J56MFV,L3F MOSFET is mainly in power converters, such as switch-mode power supplies, DC-DC converters, and in switch-mode power amplifiers. It also finds application in switching regulators, high voltage battery chargers and as a replacement part for field-effect transistors. This device also has a low RDS(ON) which makes it suitable for very low power dissipation applications, such as in portable electronic devices.
In conclusion, the SSM3J56MFV,L3F is a high-performance enhancement type Power MOSFET which is capable of fast switching and superior noise immunity. This device is primarily used in power conversion applications, such as DC-DC converters and switch mode power amplifiers. Its low on-state resistance and excellent capacitance also makes it suitable for low power dissipation applications. With its outstanding performance and wide range of applications, the SSM3J56MFV,L3F is an ideal choice for reliable high-power switch applications.
The specific data is subject to PDF, and the above content is for reference
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