SSM3J304T(TE85L,F) Allicdata Electronics
Allicdata Part #:

SSM3J304T(TE85LF)TR-ND

Manufacturer Part#:

SSM3J304T(TE85L,F)

Price: $ 0.07
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET P-CH 20V 2.3A TSM
More Detail: P-Channel 20V 2.3A (Ta) 700mW (Ta) Surface Mount T...
DataSheet: SSM3J304T(TE85L,F) datasheetSSM3J304T(TE85L,F) Datasheet/PDF
Quantity: 3000
3000 +: $ 0.06390
Stock 3000Can Ship Immediately
$ 0.07
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TSM
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 700mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 335pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 4V
Series: U-MOSIII
Rds On (Max) @ Id, Vgs: 127 mOhm @ 1A, 4V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SSM3J304T (TE85L,F) is a type of field-effect transistor (FET), more specifically a metal oxide semiconductor FET (MOSFET). It is a single-gate variant, which makes it a popular form of transistor, suitable for a variety of applications due to its availability and compatibility.

A field-effect transistor is a type of semiconductor device in which currents flow through a conductive channel between its source and the drain terminals that is shaped, set and controlled by an electric field. The SSM3J304T (TE85L,F) uses a metal oxide layer as the gate which is used to apply voltage to the transistor to shape and control the current flow. This makes it an excellent choice for applications that require a reliable current flow.

The SSM3J304T (TE85L,F) is designed for surface mount devices (SMD) and it is ideal for applications such as audio amplifiers, power amplifiers, inverters, DC-DC converters, home appliances and many other uses. It is flexible, durable and cost-effective, making it popular among electronic engineers.

The SSM3J304T (TE85L,F) has a low on-resistance of 4.5 ohms and can handle up to an 18 V drain-to-source voltage with a 350mA drain current. It is also fast switching, with a turn-on time of + 15ns and a turn-off time of + 10ns, and it can handle frequencies up to 1MHz.

The main advantage of the SSM3J304T (TE85L,F) is its low on-resistance. This results in low power dissipation, which reduces the amount of heat build-up and maximizes efficiency. It is also very reliable, with ahigh surge current capability and a low gate-source charging time.

In terms of its working principle, the SSM3J304T (TE85L,F) uses the electric field set up between its source and drain terminals to shape and control the current flow. When the gate voltage is applied, it creates an electric field which modifies the junction\'s threshold voltage, allowing current to flow from source to drain. By controlling the voltage on the gate terminal, the current passing through the channel can be adjusted.

The SSM3J304T (TE85L,F) is an excellent transistor choice for its low on-resistance, fast switching speed, high surge current capability and reliable performance in a wide range of applications. It can be used in audio amplifiers, power amplifiers, inverters, DC-DC converters, home appliances and many other uses, ensuring long-term reliability and cost-effectiveness.

The specific data is subject to PDF, and the above content is for reference

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