SSM3J35MFV,L3F

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The SSM3J35MFV,L3F is a part of the Component Type family of MOSFETs (CTMOS), which combine theadvantages of both an N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor (NMOSFET) and abipolar transistor into a single integrated package. It features a vertical N-channel with maximumdrain current of 35 A and a maximum drain-source voltage of 1000V. The device also has a dual drain/sourcestructure for better thermal performance, integrated gate protection and improved reliability. TheSSM3J35MFV,L3F is a low-power device with a low gate threshold voltage and a low input capacitance. It isideal for use in applications where size and cost are critical factors, such as in laptops, portable electronicsdevices and automotive applications.

The SSM3J35MFV,L3F is a voltage-controlled device, which utilizes a gate voltage to determine how muchcurrent flows through the device. When a positive voltage is applied to the gate, electrons are attractedfrom the source to the drain, causing the current to flow. Conversely, when a negative voltage is appliedto the gate, electrons are repelled from the source to the drain, causing the current to stop flowing. Thiseffect is known as biasing.

The SSM3J35MFV,L3F offers several advantages over BJT or NMOSFETs. Firstly, it has a higher speedthan a BJT due to the relatively low capacitance of the gate. It also offers a lower on-state resistance thanan NMOSFET due to the thin gate oxide layer. The drain-source parasitic capacitance is also lower than thatof a BJT. This makes the SSM3J35MFV,L3F an ideal choice for high-speed switching applications.

The SSM3J35MFV,L3F is also a robust device and has a high thermal robustness due to its dual drain/sourcestructure. This structure helps improve the reliability of the device and reduce the risk of device failure.In addition, the device has an integrated gate protection structure which helps protect the gate fromovervoltages and false triggering.

The SSM3J35MFV,L3F is well suited for a variety of applications, including power switching, motor andsensor control, LED lighting, and electrical power conversion. It can be used in systems that requirehigh-speed switching, low on-state resistance, low gate-to-drain capacitance, and low thermal stress. Thedevice can also be used in applications requiring low drain-source voltage, low power consumption, andhigh efficiency.

In conclusion, the SSM3J35MFV,L3F is a single chip MOSFET that provides a high speed, low on-stateresistance, and high thermal robustness. It is ideal for applications where size and cost are critical factors.The device also has an integrated gate protection structure which helps protect the gate from overvoltagesand false triggering. The SSM3J35MFV,L3F is suitable for a variety of applications, including powerswitching, motor and sensor control, LED lighting, and electrical power conversion.

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