Allicdata Part #: | SSM3K2615RLFTR-ND |
Manufacturer Part#: |
SSM3K2615R,LF |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 60V 2A SOT23 |
More Detail: | N-Channel 60V 2A (Ta) 1W (Ta) Surface Mount SOT-23... |
DataSheet: | SSM3K2615R,LF Datasheet/PDF |
Quantity: | 57000 |
3000 +: | $ 0.11230 |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Package / Case: | SOT-23-3 Flat Leads |
Supplier Device Package: | SOT-23F |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 10V |
Vgs (Max): | ±20V |
Series: | π-MOSV |
Rds On (Max) @ Id, Vgs: | 300 mOhm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 3.3V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SSM3K2615R LF is a transistor packaged in a surface-mount small-outline package. An SSM3K2615R LF is a Field Effect Transistor (FET), specifically, a down-channel type of N-channel Metal Oxide Semiconductor FET (MOSFET). The type of FET is also known as a single FET.
SSM3K2615R,LF transistors are used in a wide range of applications, both consumer and industrial. One of the primary applications for these transistors is in power conversion circuits, because transistors are often better than other power-handling components at handling large amounts of power, at high voltages and high currents. Other applications include motor controls, as well as applications in general DC-to-DC converter circuits. SSM3K2615R transistors can also be found in power supply circuits and even audio amplifier circuits.
In the world of transistors, the SSM3K2615R LF utilizes a very simple working principle. This is a standard FET structure that takes a total of three conductive plates or electrodes – the gate, the source, and the drain, which are typically connected to the power supply – and uses a voltage applied to the gate as a means for regulating current between the source and the drain. A capacitor can also be added to the gate, to reduce transients and help stabilize the circuit.
The gate voltage serves as a control for the current passing from the drain to the source. A positive voltage will cause the current to flow, while a negative voltage prevents current from flowing. The SSM3K2615R LF is rated up to a certain voltage and current, which means it can handle a certain amount of power without becoming damaged. This is why it is often used in applications where high-current loads are necessary. It is also relatively inexpensive compared to other high-current power handling components.
This single FET is a very useful device in a wide variety of applications, and the SSM3K2615R LF is no exception. With its ability to handle large amounts of power and its relatively low cost, it is ideal for many applications where power must be handled efficiently. It is also very simple to use and does not require any special circuitry or components, making it an attractive choice for those who may be new to transistor technology.
The specific data is subject to PDF, and the above content is for reference
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