Allicdata Part #: | SSM3K329RLFTR-ND |
Manufacturer Part#: |
SSM3K329R,LF |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N CH 30V 3.5A 2-3Z1A |
More Detail: | N-Channel 30V 3.5A (Ta) 1W (Ta) Surface Mount SOT-... |
DataSheet: | SSM3K329R,LF Datasheet/PDF |
Quantity: | 162000 |
3000 +: | $ 0.06521 |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Package / Case: | SOT-23-3 Flat Leads |
Supplier Device Package: | SOT-23F |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 123pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 1.5nC @ 4V |
Series: | U-MOSIII |
Rds On (Max) @ Id, Vgs: | 126 mOhm @ 1A, 4V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SSM3K329R,LF is a n-channel, enhancement-mode, trench gate and power MOSFET transistor. It is designed for use in high frequency, power switching and voltage regulation applications, offering an ideal combination of fast switching, low on-resistance and cost.
This device is commonly used in amplifier and switching circuits and is suitable for use in most solid-state applications due to its efficient operation. It is used in many power applications such as playing or recording audio and controlling motors, as well as providing voltage regulation and switching. The SSM3K329R,LF is popular in the design of high-frequency switching circuits, providing fast switching speeds and low on-resistance.
The SSM3K329R,LF has a maximum drain-source voltage (VDSS) rating of 30 volts, a drain-source on-resistance (RDS(on)) of 11 milliohm, a gate-source threshold voltage (VTH) of 1.2 volts and a gate-source leakage current (ID) rating of 15 nanoamps. This device is designed to handle the large currents and voltages required in power switching and voltage regulation applications. It is capable of operating at high frequencies and its low on-resistance gives it a high efficiency.
The working principle of the SSM3K329R,LF MOSFET is based on the Field Effect Transistor (FET) concept. The FET is an electronic device in which two electrodes control or modulate the current that flows through a third electrode. The two main electrodes are the source and the drain, while the gate electrode controls the current flowing through the other two. It acts as a switch to control the current flow through the device.
In the SSM3K329R,LF, the gate is connected to the substrate, in order to control the current flow. When a voltage is applied to the gate, it creates an electric field which modulates the current flow between the source and the drain. This allows for current conduction when the gate voltage is low, and for high impedance when the gate voltage is higher, thus allowing for current control.
The SSM3K329R,LF has versatile applications in both power switching and voltage regulation applications. It is ideal for use in high frequency circuits due to its fast switching speed and low on-resistance. It is also suitable for use in most digital circuits due to its efficient operation. The SSM3K329R,LF’s ability to handle large currents and voltages, along with its fast switching speed, low on-resistance, and high efficiency, makes it a popular choice for use in many power switching and voltage regulation applications.
The specific data is subject to PDF, and the above content is for reference
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