SSM3K35AFS,LF Allicdata Electronics
Allicdata Part #:

SSM3K35AFSLFTR-ND

Manufacturer Part#:

SSM3K35AFS,LF

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CHANNEL 20V 250MA SSM
More Detail: N-Channel 20V 250mA (Ta) 500mW (Ta) Surface Mount ...
DataSheet: SSM3K35AFS,LF datasheetSSM3K35AFS,LF Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02833
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Vgs(th) (Max) @ Id: 1V @ 100µA
Package / Case: SC-75, SOT-416
Supplier Device Package: SSM
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 500mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
Series: U-MOSIII
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 150mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SSM3K35AFS,LF is a MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. While it is a single FET, it is used in various applications due to its size, robustness, and performance. This article looks at the application fields and working principle of the SSM3K35AFS,LF MOSFET.

Applications of the SSM3K35AFS,LF MOSFET

The SSM3K35AFS,LF is a popular MOSFET for a variety of applications. It is mainly used for switching applications due to its low on-state resistance, low gate charge, low input capacitance, and high breakdown voltage. Additionally, it is also used in DC-DC converter, DC motor control, and power management applications. Furthermore, the SSM3K35AFS,LF is also widely used in power amplifiers and power supplies.

Working Principle of the SSM3K35AFS,LF MOSFET

The SSM3K35AFS,LF MOSFET has a metal oxide insulation layer between its source and drain. This layer creates a depletion layer that modulates the flow of electrons. The gate terminal connected to the metal oxide at the source and drain acts as a control terminal that allows current to flow through the insulated layer when it is energized. When the gate voltage is applied, it turns the depletion layer into an enhancement layer and allows current to flow through the device. This is known as the working principle of the MOSFET.

Advantages of the SSM3K35AFS,LF MOSFET

The SSM3K35AFS,LF offers many advantages, including its low on-state resistance, low gate charge, low input capacitance, and high breakdown voltage. Additionally, the SSM3K35AFS,LF also provides high frequency operation, making it ideal for high speed switching applications. Furthermore, the device is robust and reliable, and offers excellent surge-rated protection.

Conclusion

The SSM3K35AFS,LF is a single FET, widely used in various applications due to its size, robustness, and performance. It is mainly used for switching applications due to its low on-state resistance, low gate charge, low input capacitance, and high breakdown voltage. The device also provides high frequency operation, making it ideal for high speed switching applications. Furthermore, it offers excellent surge-rated protection and is a robust and reliable device.

The specific data is subject to PDF, and the above content is for reference

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