
Allicdata Part #: | SSM3K35AFSLFTR-ND |
Manufacturer Part#: |
SSM3K35AFS,LF |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CHANNEL 20V 250MA SSM |
More Detail: | N-Channel 20V 250mA (Ta) 500mW (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.02833 |
Vgs(th) (Max) @ Id: | 1V @ 100µA |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SSM |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 36pF @ 10V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 0.34nC @ 4.5V |
Series: | U-MOSIII |
Rds On (Max) @ Id, Vgs: | 1.1 Ohm @ 150mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 250mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SSM3K35AFS,LF is a MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. While it is a single FET, it is used in various applications due to its size, robustness, and performance. This article looks at the application fields and working principle of the SSM3K35AFS,LF MOSFET.
Applications of the SSM3K35AFS,LF MOSFET
The SSM3K35AFS,LF is a popular MOSFET for a variety of applications. It is mainly used for switching applications due to its low on-state resistance, low gate charge, low input capacitance, and high breakdown voltage. Additionally, it is also used in DC-DC converter, DC motor control, and power management applications. Furthermore, the SSM3K35AFS,LF is also widely used in power amplifiers and power supplies.
Working Principle of the SSM3K35AFS,LF MOSFET
The SSM3K35AFS,LF MOSFET has a metal oxide insulation layer between its source and drain. This layer creates a depletion layer that modulates the flow of electrons. The gate terminal connected to the metal oxide at the source and drain acts as a control terminal that allows current to flow through the insulated layer when it is energized. When the gate voltage is applied, it turns the depletion layer into an enhancement layer and allows current to flow through the device. This is known as the working principle of the MOSFET.
Advantages of the SSM3K35AFS,LF MOSFET
The SSM3K35AFS,LF offers many advantages, including its low on-state resistance, low gate charge, low input capacitance, and high breakdown voltage. Additionally, the SSM3K35AFS,LF also provides high frequency operation, making it ideal for high speed switching applications. Furthermore, the device is robust and reliable, and offers excellent surge-rated protection.
Conclusion
The SSM3K35AFS,LF is a single FET, widely used in various applications due to its size, robustness, and performance. It is mainly used for switching applications due to its low on-state resistance, low gate charge, low input capacitance, and high breakdown voltage. The device also provides high frequency operation, making it ideal for high speed switching applications. Furthermore, it offers excellent surge-rated protection and is a robust and reliable device.
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