STGWA19NC60HD Allicdata Electronics
Allicdata Part #:

497-11088-5-ND

Manufacturer Part#:

STGWA19NC60HD

Price: $ 2.02
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT 600V 52A 208W TO247
More Detail: IGBT 600V 52A 208W Through Hole TO-247-3
DataSheet: STGWA19NC60HD datasheetSTGWA19NC60HD Datasheet/PDF
Quantity: 438
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 2.02000
10 +: $ 1.95940
100 +: $ 1.91900
1000 +: $ 1.87860
10000 +: $ 1.81800
Stock 438Can Ship Immediately
$ 2.02
Specifications
Series: PowerMESH™
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 52A
Current - Collector Pulsed (Icm): 60A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
Power - Max: 208W
Switching Energy: 85µJ (on), 189µJ (off)
Input Type: Standard
Gate Charge: 53nC
Td (on/off) @ 25°C: 25ns/97ns
Test Condition: 390V, 12A, 10 Ohm, 15V
Reverse Recovery Time (trr): 31ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Base Part Number: STG*19NC
Description

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STGWA19NC60HD is a single IGBT chip, which belongs to the kind of transistors. IGBTs are short for Insulated Gate Bipolar Transistors, which is a combination of BJT and MOSFET. This kind of transistors can be made of two or more unpopulated basic functions that provide power, voltage and logic-level control and/or switching functions. STGWA19NC60HD chip is one of the leading products from STMicroelectronics. It has 19A collector current, with a total max blocking voltage of 600V.

The application field for STGWA19NC60HD chip is wide, and its features make it suitable for various applications and industries, such as industrial inverters, motor control and power conversion. Moreover, this chip can also be used in automotive applications and high-current switching and control. Its features also make it suitable for applications where miniaturization is required, like Uninterruptible Power Supplies and renewable energy solutions.

STGWA19NC60HD chip is equipped with a number of advantages that make it ideal for its applications. It has low conduction losses, low switching losses and high immunity to short-circuit. In addition, it has a fast switching time, making it capable of achieving higher performance in power conversion. Furthermore, it has a built-in temperature protection circuit, making it safe for high-power switching applications.

The working principle of STGWA19NC60HD chip follows the principle of Insulated Gate Bipolar Transistors. This kind of transistors is based on an insulated-gate structure, wherein two transistors, a P-type FET and an N-type FET, are connected in series. When a voltage is applied to the gate of the P-type FET, a channel is created that allows electrons to flow, thereby allowing the current to flow across the transistor and serve as a switch. The N-type FET then acts as a rectifier, allowing the current to flow in one direction.

Furthermore, since STGWA19NC60HD chip is equipped with a built-in protection circuit, it has a lower chance of failure from high temperature and short-circuit. When the temperature of the chip exceeds the rated maximum, the protection circuit interrupts the current flow and thereby limits the damage that can occur.

In conclusion, STGWA19NC60HD is a single-chip IGBT from STMicroelectronics. It is suitable for various power conversion and switching applications. It has low conduction and switching losses, fast switching time, and a built-in temperature protection circuit for enhanced safety. The working principle of this chip follows the principle of insulated-gate bipolar transistors, wherein two FETs are connected in series and a gate voltage is used to activate the switch.

The specific data is subject to PDF, and the above content is for reference

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