STGW33IH120D

Power - Max:	220W
Supplier Device Package:	TO-247 Long Leads
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	85ns
Test Condition:	960V, 20A, 10 Ohm, 15V
Td (on/off) @ 25°C:	46ns/284ns
Gate Charge:	127nC
Input Type:	Standard
Switching Energy:	1.5mJ (on), 3.4mJ (off)
Series:	PowerMESH™
Vce(on) (Max) @ Vge, Ic:	2.8V @ 15V, 20A
Current - Collector Pulsed (Icm):	45A
Current - Collector (Ic) (Max):	60A
Voltage - Collector Emitter Breakdown (Max):	1200V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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The STGW33IH120D from STMicroelectronics is a low capacitance, 1200V N-Channel IGBT designed for use in a wide range of applications including motor control, uninterrupted power supplies (UPS) and off-line switched mode power supplies (SMPS). Its features include a low gate charge, a low output capacitance, a low forward voltage drop, and fast and efficient switching capabilities. In this article, we’ll discuss the application field and working principle of the STGW33IH120D.

Application Field of the STGW33IH120D:

The STGW33IH120D can be used in many different applications, including motor control, UPS systems, and off-line SMPS. It is an ideal device for high-voltage DC-motors, AC-to-DC converters, and for inverters for AC-motors.In motor control applications, the STGW33IH120D can be used to control the speed and direction of a motor by providing a gate voltage of either positive or negative polarity. In UPS systems, the device can provide efficient and reliable power to a system in the event of a power outage. Finally, in off-line SMPS applications, the device can be used as an efficient and reliable switch.

Working Principle of the STGW33IH120D:

The STGW33IH120D is an IGBT, which stands for Insulated Gate Bipolar Transistor. This device is a combination of a MOSFET and BJT, which is capable of enabling fast switching operations with low losses.The device is constructed by combining two separate layers of semiconductor material in a manner that allows it to act as a single transistor. The first layer consists of a n-type source and drain region, similar to that of a MOSFET. The second layer consists of a p-type layer sandwiched between the n-type regions.The gate terminal of the device is insulated from the source and drain regions. Applying a voltage to the gate can attract electrons to the p-type region, which then allows a large current to flow through the device. This current flows from the source to the drain of the device, and can be used to turn on and off electrical devices.In conclusion, the STGW33IH120D is a low capacitance, 1200V N-Channel IGBT designed for a variety of applications. Its combination of low gate charge, low output capacitance, and low forward voltage drop enable it to provide fast and efficient switching capabilities. Additionally, its two-layer construction allows it to act as a single transistor and enable current to flow through it when a voltage is applied to the gate.

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