Allicdata Part #: | 497-17619-ND |
Manufacturer Part#: |
STGW8M120DF3 |
Price: | $ 2.79 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRENCH GATE FIELD-STOP IGBT M SE |
More Detail: | IGBT Trench Field Stop 1200V 16A 167W Through Hole... |
DataSheet: | STGW8M120DF3 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 2.53890 |
10 +: | $ 2.26422 |
100 +: | $ 1.85655 |
500 +: | $ 1.50334 |
1000 +: | $ 1.26787 |
Switching Energy: | 390µJ (on), 370µJ (Off) |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 103ns |
Test Condition: | 600V, 8A, 33 Ohm, 15V |
Td (on/off) @ 25°C: | 20ns/126ns |
Gate Charge: | 32nC |
Input Type: | Standard |
Series: | M |
Power - Max: | 167W |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 8A |
Current - Collector Pulsed (Icm): | 32A |
Current - Collector (Ic) (Max): | 16A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | Trench Field Stop |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
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IGBTs are a type of transistor that is used in various applications in order to control power. They are often used in motor and appliance controls, as well as in some industrial and commercial applications. The STGW8M120DF3 is a single, insulated gate bipolar transistor (IGBT) and it is designed to handle high-voltage and high power levels. In this article, we will discuss the application fields and working principle of the STGW8M120DF3.
Application Fields
The STGW8M120DF3 is typically used in motor control, appliance control, induction cooking, solar inverters, uninterruptible power supply systems, UPS, high-voltage IGBT modules, traction inverters, and photovoltaic inverters. As a result, this IGBT can be found in many manufacturing and industrial facilities, as well as in consumer-level applications. The main benefits of using this IGBT are its high maximum voltage, high operating temperature, and fast switching speeds.
Working Principle
The STGW8M120DF3 is a type of IGBT that operates by combining the best features of a bipolar transistor with an insulated gate field-effect transistor (MOSFET). It uses the two components in an interrupt circuit that controls the flow of electricity when the IGBT is turned on. This is done by having the base electrode of the IGBT serve as an insulation barrier between the source and drain. When the voltage level at the gate reaches a certain level, the primary current will flow, which then causes the switch to turn on. The STGW8M120DF3 also can be used as a high-frequency switch, which is able to rapidly change between on and off.
In summary, the STGW8M120DF3 is a single, insulated-gate bipolar transistor (IGBT). It is commonly used in a variety of applications, such as motor control, appliance control, induction cooking, solar inverters, uninterruptible power supply systems, UPS, high-voltage IGBT modules, traction inverters, and photovoltaic inverters. The working principle is that the base electrode of the IGBT serves as an insulation barrier between the source and drain. This can then be used to control the flow of electricity when the IGBT is turned on. The major benefit of this IGBT is its high maximum voltage, high operating temperature, and fast switching speeds.
The specific data is subject to PDF, and the above content is for reference
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