STGWT60V60DF Allicdata Electronics
Allicdata Part #:

497-13836-5-ND

Manufacturer Part#:

STGWT60V60DF

Price: $ 3.88
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT 600V 80A 375W TO3P
More Detail: IGBT Trench Field Stop 600V 80A 375W Through Hole
DataSheet: STGWT60V60DF datasheetSTGWT60V60DF Datasheet/PDF
Quantity: 148
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 3.52800
10 +: $ 3.16575
100 +: $ 2.59402
500 +: $ 2.20826
1000 +: $ 1.86239
Stock 148Can Ship Immediately
$ 3.88
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 240A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Power - Max: 375W
Switching Energy: 750µJ (on), 550µJ (off)
Input Type: Standard
Gate Charge: 334nC
Td (on/off) @ 25°C: 60ns/208ns
Test Condition: 400V, 60A, 4.7 Ohm, 15V
Reverse Recovery Time (trr): 74ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Description

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The STGWT60V60DF is a type of insulated-gate bipolar transistor (IGBT). Unlike conventional bipolar transistors, which are supported by a substrate and have one base region, IGBTs have two distinct base regions and are supported on an insulated substrate. This allows the device to have higher switching speeds and achieve higher power gains than traditional bipolar transistors.

The STGWT60V60DF is specifically designed for use in high-speed switching applications. It has a maximum voltage rating of 60V, a nominal current rating of 60A, and is capable of handling up to 25W of power. The device has a fast response time, allowing it to switch rapidly between its "on" and "off" states without incurring any significant losses. This makes it ideal for use in power supplies and other power applications.

The STGWT60V60DF is a single-channel device, meaning that it has a single base region and a single collector region. When the device is in its off state, the base-collector junction is open and no current can flow between them. However, when the gate voltage is applied, the junction becomes conductive and current can flow, allowing the device to switch on. Additionally, the IGBT has a built-in flyback diode, which helps to dissipate any inductive energy as the device is switched off.

The STGWT60V60DF is typically used in applications where fast switching speeds and high power gains are required. Examples include power supplies, inverters, motor control circuits, lighting systems, and pulse power transmitters. Its fast response times allow it to control the output of these systems more efficiently and accurately, making it a valuable component in any design.

In summary, the STGWT60V60DF is an IGBT transistor specifically designed for high-speed switching applications. It has a nominal current rating of 60A and a maximum voltage rating of 60V. The device is capable of switching rapidly between its "on" and "off" states without incurring significant losses, thus making it suitable for use in a variety of power supply and motor control applications.

The specific data is subject to PDF, and the above content is for reference

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