Allicdata Part #: | STGWT20HP65FB-ND |
Manufacturer Part#: |
STGWT20HP65FB |
Price: | $ 1.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT |
More Detail: | IGBT Trench Field Stop 650V 40A 168W Through Hole ... |
DataSheet: | STGWT20HP65FB Datasheet/PDF |
Quantity: | 1000 |
600 +: | $ 1.13447 |
Input Type: | Standard |
Supplier Device Package: | TO-3P |
Package / Case: | TO-3P-3, SC-65-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 140ns |
Test Condition: | 400V, 20A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | -/139ns |
Gate Charge: | 120nC |
Series: | HB |
Switching Energy: | 170µJ (off) |
Power - Max: | 168W |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 20A |
Current - Collector Pulsed (Icm): | 80A |
Current - Collector (Ic) (Max): | 40A |
Voltage - Collector Emitter Breakdown (Max): | 650V |
IGBT Type: | Trench Field Stop |
Part Status: | Active |
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One of the most popular types of power transistors is the STGWT20HP65FB. This device, often referred to as an IGBT (Insulated Gate Bipolar Transistor), is a single, high-powered transistor that is used in numerous applications. In this article, we will discuss the application field and working principle of the STGWT20HP65FB.
The STGWT20HP65FB is a power transistor capable of supplying current up to 20 Amp and can handle up to 65 Watt of power. It is typically used as a switching device in high voltage, high power applications such as inverters, welding power sources, and power converters. The STGWT20HP65FB provides tight current control, allowing it to operate over a wide range of operating frequencies. This makes it an ideal choice for applications requiring high speed switching such as high frequency pulse-width modulation.
The STGWT20HP65FB is a highly versatile device, offering a number of features that make it an ideal choice for applications where efficiency and reliability are paramount. These features include a high level of current control, fast rise and fall times, low power losses, low gate charge, and excellent temperature and noise resistance. The STGWT20HP65FB also has built-in protection against voltage breakdown and over current.
When it comes to the principle of operation, the STGWT20HP65FB functions like a traditional bipolar transistor – it controls the flow of current by varying the amount of voltage present at its gate terminal. The gate is typically connected to a DC voltage source, with the other two terminals (collector and emitter) connected to the load. When the gate is activated, current is enabled to pass through the collector-emitter junction and the load. The amount of current flowing through the junction is determined by the voltage applied to the gate terminal.
The STGWT20HP65FB is an excellent choice for power management applications. It is an efficient device and can handle a wide range of input voltages and operating frequencies. It has an extremely low gate charge, allowing it to respond quickly to changes in input voltage. This makes it ideal for applications requiring fast power flow responses. The STGWT20HP65FB has built-in overcurrent and overtemperature protection, making it a highly reliable choice for critical applications.
In conclusion, the STGWT20HP65FB is a versatile and reliable type of power transistor that is well-suited for a wide range of high voltage and high power applications. Thanks to its low gate charge, fast rise and fall time, and its integrated protection features, the STGWT20HP65FB is an excellent choice for applications that require high speed switching and high efficiency.
The specific data is subject to PDF, and the above content is for reference
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