STGWA30H60DFB Allicdata Electronics
Allicdata Part #:

STGWA30H60DFB-ND

Manufacturer Part#:

STGWA30H60DFB

Price: $ 1.46
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: IGBT
More Detail: IGBT Trench Field Stop 600V 60A 260W Through Hole ...
DataSheet: STGWA30H60DFB datasheetSTGWA30H60DFB Datasheet/PDF
Quantity: 1000
600 +: $ 1.33199
Stock 1000Can Ship Immediately
$ 1.46
Specifications
Input Type: Standard
Supplier Device Package: TO-247 Long Leads
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 53ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Td (on/off) @ 25°C: 37ns/146ns
Gate Charge: 149nC
Series: HB
Switching Energy: 383µJ (on), 293µJ (off)
Power - Max: 260W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Current - Collector Pulsed (Icm): 120A
Current - Collector (Ic) (Max): 60A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench Field Stop
Part Status: Active
Description

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Introduction

STGWA30H60DFB is a modern IGBT (Insulated Gate Bipolar Transistor ) that is categorized under the Single Transistors – IGBTs. The devices are made using the advanced Insulated Gate Bipolar Transistor Technology and offer high performance, low cost, and low order design. It has a wide range of applications and is widely used in power conversion, EMC, automotive, and industrial control areas.

Application Field

The STGWA30H60DFB IGBTs are widely used in the power conversion applications. It can be used for any voltage and power levels, thanks to its high efficiency, low resistance and over-current protection. Apart from this, these IGBTs are also used in various types of AC and DC drive motor, high power switching, motor control, inverters, static converters, and frequency conversion power supplies. The devices are also widely used in the automotive sector, particularly in the electric vehicles.

Working Principle

STGWA30H60DFB IGBTs work on a principle similar to MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). They use a conducting channel between their drain and source, which is modulated by an electrically active gate. When the voltage is applied to the gate, the channel opens and electrons move from the source to the drain. Thus, this device controls the current flow through the device and performs its intended task.

Additionally, these IGBTs also employ a number of features for versatile performance. These include soft switching which reduces power loss, active frequency control for improved power quality and efficiency, active snubber for faster switching times, undervoltage protection for reducing high voltage and current, fast recovery in turn-off conditions, and over-voltage break protection.

Conclusion

In conclusion, STGWA30H60DFB IGBTs are highly reliable and versatile devices that are used in a wide range of industries and applications. It offers great value with its low cost, high efficiency and low order design. Additionally, its versatile features offer great performance and robustness in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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